STE110NS20FD STMicroelectronics, STE110NS20FD Datasheet - Page 9

• Manufacturer Part Number: STE110NS20FD
• Description: MOSFET N-CH 200V 110A ISOTOP
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STE110NS20FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 504nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2657-5

STE110NS20FD
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at :
www.st.com
Package mechanical data
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