STE180NE10 STMicroelectronics, STE180NE10 Datasheet

MOSFET N-CH 100V 180A ISOTOP

STE180NE10

Manufacturer Part Number
STE180NE10
Description
MOSFET N-CH 100V 180A ISOTOP
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STE180NE10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 40A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
795nC @ 10V
Input Capacitance (ciss) @ Vds
21000pF @ 25V
Power - Max
360W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3166-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STE180NE10
Quantity:
218
Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
February 2007
STE180NE10
100% avalanche tested
Low intrinsic capacitance
Gate charge minimized
Reduced voltage spread
Switching application
Type
STE180NE10
Part number
V
100V
DSS
R
<6mΩ
DS(on)
E180NE10
Marking
N-channel 100V - 4.5mΩ - 180A - ISOTOP
180A
I
D
Rev 6
Internal schematic diagram
STripFET™ Power MOSFET
Package
ISOTOP
ISOTOP
STE180NE10
Packaging
Tube
www.st.com
1/12
12

Related parts for STE180NE10

STE180NE10 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STE180NE10 February 2007 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET™ Power MOSFET R I DS(on) D <6mΩ 180A Internal schematic diagram Marking E180NE10 Rev 6 STE180NE10 ISOTOP Package Packaging ISOTOP Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STE180NE10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STE180NE10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous 100°C C (1) I Drain current (pulsed Total dissipation at T TOT Derating factor V Insulation withstand voltage (AC-RMS) ISO T Operating junction temperature ...

Page 4

... D(on) DS(on)max I = 25V 1MHz 90V 4.7Ω (see Figure 12 80V 10V (see Figure 13) STE180NE10 Min. Typ. Max. =0 100 4 40 ±400 = 250µ 40A 4.5 6 Min. Typ. Max 2.5 0.9 100 = 490A 600 = 10V 430 440 = 180A, 585 795 = 4.7Ω 120 ...

Page 5

... STE180NE10 Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STE180NE10 ...

Page 7

... STE180NE10 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature 7/12 ...

Page 8

... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform STE180NE10 ...

Page 9

... STE180NE10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STE180NE10 inch MIN. TYP. MAX. 0.466 0.480 0.350 0.358 0.076 0.080 0.029 0.033 0.496 0.503 0.990 1.003 1.240 1.248 0.157 0.161 0.169 0.586 0.594 1.185 1 ...

Page 11

... STE180NE10 5 Revision history Table 7. Revision history Date 09-Sep-2004 03-Aug-2006 20-Feb-2007 Revision 4 Complete document 5 New template, no content change 6 Typo mistake on page 1 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STE180NE10 ...

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