STE180NE10 STMicroelectronics, STE180NE10 Datasheet - Page 3

• Manufacturer Part Number: STE180NE10
• Description: MOSFET N-CH 100V 180A ISOTOP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STE180NE10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 795nC @ 10V
• Input Capacitance (ciss) @ Vds: 21000pF @ 25V
• Power - Max: 360W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3166-5

STE180NE10
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
Table 2.
Table 3.
Symbol
Symbol
Rthj-case
I
V
P
DM
V
V
V
E
T
I
DGR
I
I
TOT
T
AR
ISO
DS
GS
stg
D
D
AS
j
(1)
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at
T
Drain current (pulsed)
Total dissipation at T
Derating factor
Insulation withstand voltage (AC-RMS)
Operating junction temperature
storage temperature
Avalanche Current, Repetitive or Not-
Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
V
Absolute maximum ratings
Thermal data
Avalanche characteristics
C
DD
Thermal resistance junction-case max
= 100°C
= 25 V)
j
= 25 °C, I
Parameter
Parameter
C
D
GS
= 25°C
= I
GS
j
= 20kΩ)
max)
AR
= 0)
,
C
= 25°C
Max value
-55 to 150
Value
2500
± 20
2.88
100
100
180
119
360
360
720
60
Electrical ratings
0.37
W/°C
°C/W
Unit
Unit
mJ
°C
W
V
V
V
A
A
A
V
A
3/12