MOSFET N-CH 100V 180A ISOTOP

STE180NE10

Manufacturer Part NumberSTE180NE10
DescriptionMOSFET N-CH 100V 180A ISOTOP
ManufacturerSTMicroelectronics
SeriesSTripFET™
STE180NE10 datasheet
 


Specifications of STE180NE10

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs6 Ohm @ 40A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C180AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs795nC @ 10VInput Capacitance (ciss) @ Vds21000pF @ 25V
Power - Max360WMounting TypeChassis Mount
Package / CaseISOTOPLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-3166-5  
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STE180NE10
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
Drain-source voltage (V
DS
V
Drain-gate voltage (R
DGR
V
Gate-source voltage
GS
I
Drain current (continuous) at T
D
Drain current (continuous) at
I
D
T
= 100°C
C
(1)
I
Drain current (pulsed)
DM
P
Total dissipation at T
TOT
Derating factor
V
Insulation withstand voltage (AC-RMS)
ISO
T
Operating junction temperature
j
T
storage temperature
stg
1. Pulse width limited by safe operating area
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
Table 3.
Avalanche characteristics
Symbol
Avalanche Current, Repetitive or Not-
Repetitive
I
AR
(pulse width limited by T
Single Pulse Avalanche Energy
E
(starting T
AS
V
= 25 V)
DD
Parameter
= 0)
GS
= 20kΩ)
GS
= 25°C
C
= 25°C
C
Parameter
max)
j
= 25 °C, I
= I
,
j
D
AR
Electrical ratings
Value
Unit
100
V
100
V
± 20
V
180
A
119
A
360
A
360
W
2.88
W/°C
2500
V
-55 to 150
°C
0.37
°C/W
Max value
Unit
60
A
720
mJ
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