STE180NE10 STMicroelectronics, STE180NE10 Datasheet - Page 5

• Manufacturer Part Number: STE180NE10
• Description: MOSFET N-CH 100V 180A ISOTOP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STE180NE10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 795nC @ 10V
• Input Capacitance (ciss) @ Vds: 21000pF @ 25V
• Power - Max: 360W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3166-5

STE180NE10
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see
SD
SD
DD
= 180A, V
= 100A,
= 50V, T
Figure
Test conditions
14)
j
GS
= 150°C
= 0
Min.
Electrical characteristics
Typ.
1.65
235
14
Max.
180
540
1.5
Unit
µC
ns
A
A
V
A
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