STE180NE10 STMicroelectronics, STE180NE10 Datasheet - Page 7

• Manufacturer Part Number: STE180NE10
• Description: MOSFET N-CH 100V 180A ISOTOP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STE180NE10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 795nC @ 10V
• Input Capacitance (ciss) @ Vds: 21000pF @ 25V
• Power - Max: 360W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3166-5

STE180NE10
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs. gate-source voltage Figure 8.
Normalized gate threshold voltage
vs. temperature
characteristics
Figure 10. Normalized on resistance vs.
Capacitance variations
temperature
Electrical characteristics
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