STE26NA90 STMicroelectronics, STE26NA90 Datasheet
STE26NA90
Specifications of STE26NA90
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STE26NA90 Summary of contents
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... Storage T emperature Max. Operating Junction Temperature j V Insulation Withstand Voltage (AC-RMS) ISO ( ) Pulse width limited by safe operating area October 1998 FAST POWER MOSFET INTERNAL SCHEMATIC DIAGRAM = 100 STE26NA90 ISOTOP Value Un it 900 V 900 16.2 A 104 A 450 -55 to 150 C o 150 ...
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... STE26NA90 THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Case-heatsink With Conductive thc-h Grease Applied AVALANCHE CHARACTERISTICS Symbo l I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbo l Parameter V Drain-source (BR)DSS Breakdown Voltage ...
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... Test Con ditions V = 720 4 (see test circuit, figure 5) Test Con ditions di/dt = 100 100 150 (see test circuit, figure 5) Thermal Impedance STE26NA90 Min. Typ. Max. Unit 470 660 226 nC Min. Typ. Max. Unit 108 152 145 203 ns Min. Typ. Max. Unit ...
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... STE26NA90 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STE26NA90 Normalized On Resistance vs Temperature 5/8 ...
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... STE26NA90 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... STE26NA90 MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0.322 7/8 ...
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... STE26NA90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...