FSB50450US
Smart Power Module (SPM
Features
• 500V R
=2.4Ω(max) 3-phase FRFET inverter including
DS(on)
high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level (MSL) 3
Absolute Maximum Ratings
Symbol
Parameter
DC Link Input Voltage,
V
PN
Drain-source Voltage of each FRFET
I
Each FRFET Drain Current, Continuous
D25
I
Each FRFET Drain Current, Continuous
D80
I
Each FRFET Drain Current, Peak
DP
P
Maximum Power Dissipation
D
V
Control Supply Voltage
CC
V
High-side Bias Voltage
BS
V
Input Signal Voltage
IN
T
Operating Junction Temperature
J
T
Storage Temperature
STG
Junction to Case Thermal Resistance
R
θJC
V
Isolation Voltage
ISO
©2009 Fairchild Semiconductor Corporation
FSB50450US Rev. A
®
)
General Description
FSB50450US is a tiny smart power module (SPM
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50450US
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50450US is the most
solution for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Conditions
T
= 25°C
C
T
= 80°C
C
T
= 25°C, PW < 100μs
C
T
= 25°C, Each FRFET
C
Applied between V
and COM
CC
Applied between V
-U, V
B(U)
Applied between IN and COM
Each FRFET under inverter operating con-
dition (Note 1)
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1
February 2009
®
) based on
Rating
Units
500
1.5
1.1
3.8
14
20
-V, V
-W
20
B(V)
B(W)
-0.3 ~ VCC+0.3
-40 ~ 150
°C
-50 ~ 150
°C
°C/W
8.9
1500
V
www.fairchildsemi.com
V
A
A
A
W
V
V
V
rms