FSB50450UD Fairchild Semiconductor, FSB50450UD Datasheet

FSB50450UD
Manufacturer Part Number	FSB50450UD
Description	MOD SPM 500V 1A SPM23-HD
Manufacturer	Fairchild Semiconductor
Series	SPM™
Type	FET
FSB50450UD datasheets	1. FSB50450UD.pdf (9 pages)

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Specifications of FSB50450UD
Configuration	3 Phase	Current	1.5A
Voltage	500V	Voltage - Isolation	1500Vrms
Package / Case	SPM23HD	Lead Free Status / RoHS Status	Lead free / RoHS Compliant

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FSB50450UD

Smart Power Module (SPM

Features

• 500V R

=2.4W(max) 3-phase FRFET inverter including

DS(on)

high voltage integrated circuit (HVIC)

• 3 divided negative dc-link terminals for inverter current sens-

ing applications

• HVIC for gate driving and undervoltage protection

• 3/5V CMOS/TTL compatible, active-high interface

• Optimized for low electromagnetic interference

• Isolation voltage rating of 1500Vrms for 1min.

• Embedded bootstrap diode in the package

Absolute Maximum Ratings

Symbol

Parameter

DC Link Input Voltage,

Drain-source Voltage of each FRFET

Each FRFET Drain Current, Continuous

D25

Each FRFET Drain Current, Continuous

D80

Each FRFET Drain Current, Peak

Maximum Power Dissipation

Control Supply Voltage

High-side Bias Voltage

Input Signal Voltage

Operating Junction Temperature

Storage Temperature

STG

Junction to Case Thermal Resistance

qJC

Isolation Voltage

ISO

FSB50450UD Rev. A

)

General Description

FSB50450UD is a tiny smart power module (SPM

FRFET technology as a compact inverter solution for small

power motor drive applications such as fan motors and water

suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),

and

half-bridge

FSB50250UTD provides low electromagnetic interference (EMI)

characteristics with optimized switching speed. Moreover, since

it employs FRFET as a power switch, it has much better

ruggedness and larger safe operation area (SOA) than that of

an IGBT-based power module or one-chip solution. The

package is optimized for the thermal performance and

compactness for the use in the built-in motor application and

any other application where the assembly space is concerned.

FSB50450UD is the most solution for the compact inverter

providing the energy efficiency, compactness, and low

electromagnetic interference.

Conditions

= 25°C

= 80°C

= 25°C, PW < 100ms

= 25°C, Each FRFET

Applied between V

and COM

Applied between V

-U, V

B(U)

Applied between IN and COM

Each FRFET under inverter operating con-

dition (Note 1)

60Hz, Sinusoidal, 1 minute, Connection

pins to heatsink

April 2010

Motion-SPM

) based on

HVICs

for

FRFET

gate

driving.

Rating

Units

500

1.5

1.1

3.8

-V, V

-W

B(V)

B(W)

-0.3 ~ VCC+0.3

-40 ~ 150

°C

-40 ~ 125

°C

°C/W

8.9

1500

www.fairchildsemi.com

rms

Download datasheet (860Kb)

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FSB50450UD Summary of contents
Page 1 ... FSB50450UD is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. ... Page 2 ... Note: Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM ure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) FSB50450UD Rev. A Pin Description IC Common Supply Ground Bias Voltage for U Phase High Side FRFET Driving ... Page 3 ... Please see Figure 5 for the switching time definition with the switching test circuit of Figure 6. 4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 6 for the RBSOA test cir- cuit that is same as the switching test circuit. FSB50450UD Rev 25°C, V ... Page 4 ... Note: Built in bootstrap diode includes around 15 Ω resistance characteristic. Figure 2. Built in Bootstrap Diode Characteristics Package Marking & Ordering Information Device Marking Device FSB50450UD FSB50450UD FSB50450UD Rev. A Conditions I = 0.1A 25° 0.1A 25° Built in Bootstrap Diode V -I Characteristic ... Page 5 ... Figure 3. Recommended CPU Interface and Bootstrap Circuit with Parameters 3.80 3.80 Note: Attach the thermocouple on top of the heatsink-side of SPM FSB50450UD Rev. A Conditions Applied between P and N Applied between V and COM CC Applied between V and output( ... Page 6 ... V IN 100 (a) Turn- Figure 6. Switching and RBSOA(Single-pulse) Test Circuit (Low-side) Input Signal UV Protection Status Low-side Supply, V MOSFET Current Input Signal UV Protection Status High-side Supply, V MOSFET Current FSB50450UD Rev 120 Figure 5. Switching Time Definition R EH VCC VB HIN HO LIN VS COM LO C One-leg Diagram of SPM ... Page 7 ... 15-V Supply FSB50450UD Rev (1) COM (2) V B(U) (3) V CC(U) VCC VB (4) IN (UH) HIN HO (5) IN (UL) LIN VS C COM LO 1 (6) V S(U) (7) V B(V) (8) V CC(V) VCC VB (9) IN (VH) HIN HO (10) IN (VL) LIN VS C COM LO 1 (11) V S(V) (12) V B(W) (13) V CC(W) ... Page 8 ... Detailed Package Outline Drawings #1 (1.165) 15*1.778=26.67 13.34 #1 #17 12.23 (2.275) #17 #19 (0.30) 0.60 ±0.05 #17,18,21,22,23 LEAD Max 1.00 FSB50450UD Rev. A 16-Max 1.00 16-0.50 ±0.05 13-(0.30) #16 ±0.30 13.34 #16 #23 13.13 29.00 ±0.20 2x3.90=7.80 ±0.30 4x3.90=15.60 ±0.30 1.95 ±0.30 #23 (0.30) 0.50 ±0.05 #19, 20 LEAD Max 1 ... Page 9 ... FSB50450UD Rev Rev. I15 www.fairchildsemi.com ...

FSB50450UD Summary of contents

Page 1
... FSB50450UD is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. ...
Page 2
... Note: Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM ure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) FSB50450UD Rev. A Pin Description IC Common Supply Ground Bias Voltage for U Phase High Side FRFET Driving ...
Page 3
... Please see Figure 5 for the switching time definition with the switching test circuit of Figure 6. 4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 6 for the RBSOA test cir- cuit that is same as the switching test circuit. FSB50450UD Rev 25°C, V ...
Page 4
... Note: Built in bootstrap diode includes around 15 Ω resistance characteristic. Figure 2. Built in Bootstrap Diode Characteristics Package Marking & Ordering Information Device Marking Device FSB50450UD FSB50450UD FSB50450UD Rev. A Conditions I = 0.1A 25° 0.1A 25° Built in Bootstrap Diode V -I Characteristic ...
Page 5
... Figure 3. Recommended CPU Interface and Bootstrap Circuit with Parameters 3.80 3.80 Note: Attach the thermocouple on top of the heatsink-side of SPM FSB50450UD Rev. A Conditions Applied between P and N Applied between V and COM CC Applied between V and output( ...
Page 6
... V IN 100 (a) Turn- Figure 6. Switching and RBSOA(Single-pulse) Test Circuit (Low-side) Input Signal UV Protection Status Low-side Supply, V MOSFET Current Input Signal UV Protection Status High-side Supply, V MOSFET Current FSB50450UD Rev 120 Figure 5. Switching Time Definition R EH VCC VB HIN HO LIN VS COM LO C One-leg Diagram of SPM ...
Page 7
... 15-V Supply FSB50450UD Rev (1) COM (2) V B(U) (3) V CC(U) VCC VB (4) IN (UH) HIN HO (5) IN (UL) LIN VS C COM LO 1 (6) V S(U) (7) V B(V) (8) V CC(V) VCC VB (9) IN (VH) HIN HO (10) IN (VL) LIN VS C COM LO 1 (11) V S(V) (12) V B(W) (13) V CC(W) ...
Page 8
... Detailed Package Outline Drawings #1 (1.165) 15*1.778=26.67 13.34 #1 #17 12.23 (2.275) #17 #19 (0.30) 0.60 ±0.05 #17,18,21,22,23 LEAD Max 1.00 FSB50450UD Rev. A 16-Max 1.00 16-0.50 ±0.05 13-(0.30) #16 ±0.30 13.34 #16 #23 13.13 29.00 ±0.20 2x3.90=7.80 ±0.30 4x3.90=15.60 ±0.30 1.95 ±0.30 #23 (0.30) 0.50 ±0.05 #19, 20 LEAD Max 1 ...
Page 9
... FSB50450UD Rev Rev. I15 www.fairchildsemi.com ...

FSB50450UD

FSB50450UD

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