FSAM30SH60A Fairchild Semiconductor, FSAM30SH60A Datasheet - Page 2

• Manufacturer Part Number: FSAM30SH60A
• Description: SMART POWER MODULE 30A SPM32-AA
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSAM30SH60A

• Configuration: 3 Phase
• Current: 30A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM32AA
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 62 W
• Power Dissipation: 62 W
• Mounting Style: SMD/SMT
• Operating Temperature (max): 125C
• Operating Temperature (min): -20C
• Pin Count: 32
• Mounting: Through Hole
• Package Type: SPM32-AA
• Case Length: 60mm
• Case Height: 7.2mm
• Screening Level: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FSAM30SH60A_NL; FSAM30SH60A_NL

©2003 Fairchild Semiconductor Corporation
Integrated Power Functions
• 600V-30A IGBT inverter for 3-phase DC/AC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
• For inverter low-side IGBTs: Gate drive circuit, Short-Circuit (SC) protection
• Temperature Monitoring: System over-temperature monitoring using built-in thermistor
• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side control supply circuit)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Note) Available temperature monitoring circuit is given in Fig. 15.
Control supply circuit under-voltage (UV) protection
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 14 and 15.
(1) V
(1) V
(1) V
(2) com
(2) com
(2) com
(3) IN
(3) IN
(3) IN
(4) IN
(4) IN
(4) IN
(5) IN
(5) IN
(5) IN
(6) com
(6) com
(6) com
(7) FO
(7) FO
(7) FO
(8) C
(8) C
(8) C
(9) C
(9) C
(9) C
(10) R
(10) R
(10) R
(11) IN
(11) IN
(11) IN
(12) V
(12) V
(12) V
(13) V
(13) V
(13) V
(14) V
(14) V
(14) V
(15) IN
(15) IN
(15) IN
(16) com
(16) com
(16) com
(17) V
(17) V
(17) V
(18) V
(18) V
(18) V
(19) V
(19) V
(19) V
(20) IN
(20) IN
(20) IN
(21) V
(21) V
(21) V
(22) V
(22) V
(22) V
(23) V
(23) V
(23) V
CC(L)
CC(L)
CC(L)
FOD
FOD
FOD
SC
SC
SC
(UL)
(UL)
(UL)
(VL)
(VL)
(VL)
(WL)
(WL)
(WL)
CC(UH)
CC(UH)
CC(UH)
B(U)
B(U)
B(U)
S(U)
S(U)
S(U)
CC(VH)
CC(VH)
CC(VH)
B(V)
B(V)
B(V)
S(V)
S(V)
S(V)
CC(WH)
CC(WH)
CC(WH)
B(W)
B(W)
B(W)
S(W)
S(W)
S(W)
SC
SC
SC
(UH)
(UH)
(UH)
(VH)
(VH)
(VH)
(WH)
(WH)
(WH)
(L)
(L)
(L)
(L)
(L)
(L)
(H)
(H)
(H)
Fig. 2.
Top View
(24) V
(24) V
(24) V
(25) R
(25) R
(25) R
(26) N
(26) N
(26) N
(27) N
(27) N
(27) N
(28) N
(28) N
(28) N
(29) U
(29) U
(29) U
(30) V
(30) V
(30) V
(31) W
(31) W
(31) W
(32) P
(32) P
(32) P
TH
TH
TH
TH
TH
TH
U
U
U
V
V
V
W
W
W
Case Temperature (T
Case Temperature (T
Detecting Point
Detecting Point
Ceramic Substrate
Ceramic Substrate
Rev. E, August 2003
C
C
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