MCC161-22IO1 IXYS, MCC161-22IO1 Datasheet - Page 2

THERISTER MODULE 2200V

MCC161-22IO1

Manufacturer Part Number
MCC161-22IO1
Description
THERISTER MODULE 2200V
Manufacturer
IXYS
Datasheet

Specifications of MCC161-22IO1

Structure
Series Connection - All SCRs
Number Of Scrs, Diodes
2 SCRs
Voltage - Off State
2200V
Current - Gate Trigger (igt) (max)
150mA
Current - On State (it (av)) (max)
165A
Current - On State (it (rms)) (max)
300A
Current - Non Rep. Surge 50, 60hz (itsm)
6000A, 6400A
Current - Hold (ih) (max)
150mA
Mounting Type
Chassis Mount
Package / Case
Y4-M6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1744599

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCC161-22IO1
Manufacturer:
MAXIM
Quantity:
101
Part Number:
MCC161-22IO1
Quantity:
60
Symbol
I
V
V
r
V
I
V
I
I
I
t
t
Q
I
R
R
d
d
a
Dimensions in mm (1 mm = 0.0394")
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L
Type ZY 180R (R = right for pin pair 6/7)
© 2005 IXYS All rights reserved
RRM
GT
GD
L
H
RM
gd
q
T
S
A
T
T0
GT
GD
thJC
thJK
S
, I
DRM
Conditions
V
I
For power-loss calculations only (T
V
V
V
V
T
di
T
T
di
T
dv/dt = 20 V/µs; I
T
-di/dt = 50 A/µs; I
per thyristor; DC current
per module
per thyristor; DC current
per module
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
T
(L = Left for pin pair 4/5)
D
D
VJ
VJ
VJ
VJ
VJ
R
D
D
G
G
= 300A; T
/dt = 0.45 A/µs; I
/dt = 0.5 A/µs; I
= V
=
=
= 25°C; V
= T
= T
= 6 V;
= 6 V;
= 25°C; V
= 25°C; V
2
2
/
/
3
3
RRM
VJM
VJM
V
V
DRM
DRM
; V
;
; T
; T
R
T
T
T
T
T
D
= 100 V; V
D
D
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
= 6 V; t
= 6 V; R
= 1/2 V
= T
= 25°C
= 25°C
= -40°C
= 25°C
= -40°C
= T
= T
T
T
= 300 A
G
G
VJM
VJM
VJM
= 160 A; -di/dt = 10A/µs
= 0.45 A
P
= 0.5 A
DRM
= 30 µs
GK
D
=
= ∞
2
/
UL 758, style 1385,
CSA class 5851, guide 460-1-1
3
V
DRM
; t
VJ
P
= 200 µs
= T
VJM
)
Characteristic Values
typ. 150
0.155
0.078
0.225
0.113
1.36
0.25
12.7
150
200
200
150
550
235
0.8
1.6
2.6
9.6
40
10
50
2
2
m/s
K/W
K/W
K/W
K/W
mm
mm
mΩ
mA
mA
mA
mA
mA
mA
µC
µs
µs
V
V
V
V
V
A
2
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Fig 3: Forward current vs. voltage
I
I
T
F
,
500
450
400
350
300
250
200
150
100
A
50
0
0.0
drop per thyristor/diode
T
VJ
= 125°C
0.5
1.0
T
V
VJ
MCC 161
MCD 161
T
, V
= 25°C
F
1.5
V
2.0
2 - 3

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