IRKL56/16A

Manufacturer Part NumberIRKL56/16A
DescriptionSCR DBL HISCR 1600V 60A ADDAPAK
ManufacturerVishay
IRKL56/16A datasheets

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Specifications of IRKL56/16A

StructureSeries Connection - SCR/DiodeNumber Of Scrs, Diodes1 SCR, 1 Diode
Voltage - Off State1600VCurrent - Gate Trigger (igt) (max)150mA
Current - On State (it (av)) (max)60ACurrent - On State (it (rms)) (max)135A
Current - Non Rep. Surge 50, 60hz (itsm)1310A, 1370ACurrent - Hold (ih) (max)200mA
Mounting TypeChassis MountPackage / CaseADD-A-PAK (3 + 2)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther names*IRKL56/16A
IRKL56/16
IRKL56/16
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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
peak reverse voltage peak reverse voltage
-
04
06
08
IRK.41/ .56
10
12
14
16
On-state Conduction
Parameters
IRK.41
I
Max. average on-state
T(AV)
current (Thyristors)
45
I
Maximum average
45
F(AV)
forward current (Diodes)
I
Max. continuous RMS
)
O(RMS
on-state current.
100
As AC switch
I
Max. peak, one cycle
850
TSM
or
non-repetitive on-state
890
I
or forward current
715
FSM
750
940
985
2
2
I
t
Max. I
t for fusing
3.61
3.30
2.56
2.33
4.42
4.03
2
2
I
t
Max. I
t for fusing (1)
36.1
V
Max. value of threshold
0.88
T(TO)
voltage (2)
0.91
r
Max. value of on-state
5.90
t
slope resistance (2)
5.74
V
Max. peak on-state or
TM
1.81
V
forward voltage
FM
di/dt
Max. non-repetitive rate
of rise of turned on
current
I
Max. holding current
H
I
Max. latching current
L
2
2
=
(1) I
t for time t
I
t x t
(2) Average power
x
x
(4) I >
x I
AV
2
V
, maximum
V
, maximum
RRM
RSM
repetitive
non-repetitive
V
V
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
IRK.56
Units
Conditions
60
180
60
T
= 85
C
135
A
1310
t=10ms No voltage
1370
t=8.3ms reapplied
1100
t=10ms 100% V
1150
t=8.3ms reapplied
1450
t=10ms T
1520
t=8.3ms no voltage reapplied
8.56
t=10ms No voltage
7.82
t=8.3ms reapplied
6.05
t=10ms 100% V
2
KA
s
5.53
t=8.3ms reapplied
10.05
t=10ms T
9.60
t=8.3ms no voltage reapplied
2
85.6
KA
s
t=0.1 to 10ms, no voltage reapplied
0.85
Low level (3)
V
0.88
High level (4)
3.53
Low level (3)
m
3.41
High level (4)
I
= x I
TM
1.54
V
I
= x I
FM
T
= 25
J
I
= x I
TM
150
A/µs
t
< 0.5 µs, t
r
T
= 25
J
200
resistive load, gate open circuit
mA
400
T
= 25
J
2
=
+
V
x I
r
x (I
)
T(TO)
T(AV)
t
T(RMS)
V
, max. repetitive
I
DRM
RRM
peak off-state voltage,
I
DRM
gate open circuit
125°C
V
mA
400
600
800
1000
15
1200
1400
1600
o
conduction, half sine wave,
o
C
or
I
I
(RMS)
(RMS)
Sinusoidal
half wave,
RRM
Initial T
= T
max.
J
J
o
= 25
C,
J
Initial T
= T
max.
J
J
RRM
= 25
o
C,
J
T
= T
max
J
J
T
= T
max
J
J
T(AV)
T
= 25°C
J
F(AV)
o
C, from 0.67 V
,
DRM
,
I
= 500mA,
T(AV)
g
> 6 µs
p
o
C, anode supply = 6V,
o
C, anode supply = 6V,resistive load
(3) 16.7% x
x I
< I <
x I
AV
AV
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