ESM5045DV STMicroelectronics, ESM5045DV Datasheet

IC PWR MODULE DARL NPN ISOTOP

ESM5045DV

Manufacturer Part Number
ESM5045DV
Description
IC PWR MODULE DARL NPN ISOTOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of ESM5045DV

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
60A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
1.4V @ 2.8A, 50A
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 50A, 5V
Power - Max
175W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5334-5
ESM5045DV

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ESM5045DV
Manufacturer:
ST
Quantity:
27
Part Number:
ESM5045DV
Manufacturer:
LAMBDA
Quantity:
387
Part Number:
ESM5045DV
Manufacturer:
ST
0
INDUSTRIAL APPLICATIONS:
ABSOLUTE MAXIMUM RATINGS
September 2003
V
Symbol
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ULTRAFAST FREEWHEELING DIODE
FULLY INSULATED PACKAGE (UL
COMPLIANT)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
MOTOR CONTROL
SMPS & UPS
WELDING EQUIPMENT
CEO(sus)
V
V
V
T
P
I
I
CEV
EBO
I
CM
T
I
BM
isol
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Insulation Withstand Voltage (RMS) from All
Four Terminals to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
®
th
JUNCTION CASE
Parameter
p
c
= 10 ms)
= 25
C
NPN DARLINGTON POWER MODULE
p
= 0)
= 10 ms)
B
o
BE
C
= 0)
= -5 V)
INTERNAL SCHEMATIC DIAGRAM
-55 to 150
Value
2500
600
450
175
150
ISOTOP
60
90
12
7
6
ESM5045DV
Unit
o
o
W
V
V
V
A
A
A
V
A
C
C
1/8

Related parts for ESM5045DV

ESM5045DV Summary of contents

Page 1

... Insulation Withstand Voltage (RMS) from All isol Four Terminals to Exernal Heatsink T Storage Temperature stg T Max. Operating Junction Temperature j September 2003 NPN DARLINGTON POWER MODULE INTERNAL SCHEMATIC DIAGRAM = - ms ms ESM5045DV ISOTOP Value Unit 600 V 450 175 W 2500 V o -55 to 150 C o 150 ...

Page 2

... ESM5045DV THERMAL DATA R Thermal Resistance Junction-case (transistor) thj-case R Thermal Resistance Junction-case (diode) thj-case R Thermal Resistance Case-heatsink With Conductive thc-h Grease Applied ELECTRICAL CHARACTERISTICS (T Symbol Parameter I # Collector Cut-off CER Current ( Collector Cut-off CEV Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(SUS) Sustaining Voltage ...

Page 3

... Safe Operating Areas Derating Curve Collector Emitter Saturation Voltage Thermal Impedance Collector-emitter Voltage Versus base-emitter Resistance Base-Emitter Saturation Voltage ESM5045DV 3/8 ...

Page 4

... ESM5045DV Reverse Biased SOA Reverse Biased AOA Switching Times Inductive Load 4/8 Foward Biased SOA Forward Biased AOA Switching Times Inductive Load Versus Temperature ...

Page 5

... Dc Current Gain Peak Reverse Current Versus di Turn-on Switching Waveforms Typical V /dt Turn-on Switching Test Circuit F ESM5045DV Versus 5/8 ...

Page 6

... ESM5045DV Turn-on Switching Test Circuit Turn-off Switching Test Circuit of Diode 6/8 Turn-off Switching Waveforms Turn-off Switching Waveform of Diode ...

Page 7

... ESM5045DV MAX. 0.480 0.358 0.322 0.033 0.080 1.503 1.248 1.003 0.950 0.594 0.503 1.169 0.169 0.196 0.169 0.173 1.193 P093A 7/8 ...

Page 8

... ESM5045DV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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