RPI-0126 Rohm Semiconductor, RPI-0126 Datasheet
RPI-0126
Manufacturer Part Number
RPI-0126
Description
SENSOR OPTO SLOT 1.2MM TRANS SMD
Manufacturer
Rohm Semiconductor
Type
Unamplifiedr
Datasheet
1.RPI-0126.pdf
(2 pages)
Specifications of RPI-0126
Sensing Distance
0.047" (1.2mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
30mA
Voltage - Collector Emitter Breakdown (max)
30V
Response Time
10µs, 10µs
Mounting Type
Surface Mount
Package / Case
4-SMD
Operating Temperature
-30°C ~ 85°C
Output Collector Emitter Voltage (detector)
30 V
Maximum Reverse Voltage (emitter)
5 V
Maximum Collector Current (detector)
30 mA
Slot Width
1.2 mm
Output Device
Phototransistor
Power Dissipation
80 mW
Maximum Fall Time
10000 ns (Typ)
Maximum Operating Temperature
+ 85 C
Maximum Rise Time
10000 ns (Typ)
Minimum Operating Temperature
- 30 C
Wavelength
800 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
511-1630-2
RPI-0126
RPI-0126
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RPI-0126
Manufacturer:
ROHM Semiconductor
Quantity:
1 742
Part Number:
RPI-0126
Manufacturer:
ROHM/罗姆
Quantity:
20 000
RPI-0126
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
DC leakage current
Collector-emitter saturation voltage
Response time
Peak light emitting wavelength
Response time
Maximum sensitivity wavelength
120
100
120
100
Parameter
80
60
40
20
80
60
40
20
Parameter
0
Fig.1 Relative output current vs.
0
0
0
Fig.4 Relative output current vs.
sample No 1
sample No 2
sample No 3
distance ( )
0.2
0.3
distance ( )
Photointerrupter, Ultraminiature SMD type
DISTANCE : d (mm)
DISTANCE : d (mm)
sample No 1
sample No 2
sample No 3
Rise time
Fall time
0.4
0.6
0.6
0.9
Symbol
V
V
Topr
Tstg
0.8
1.2
V
P
P
I
CEO
ECO
I
F
C
R
D
C
Symbol
d
V
I
tr tf
I
CE(sat)
V
CEO
λ
leak
λ
λ
I
I
I
tr
tf
R
C
C
F
P
P
P
1.5
1
−30 to +85
−40 to +85
0.15
Min.
0.9
Limits
−
−
−
−
−
−
−
−
−
−
−
4.5
50
80
30
30
80
5
Typ.
800
850
800
1.5
10
10
10
−
−
−
−
−
−
Fig.5 Power dissipation / collector power
120
100
80
60
40
20
50
40
30
20
10
0
Max.
0.75
0
1.8
10
0.1
3.6
0.4
−
5
−
−
−
−
−
dissipation vs. ambient temperature
−20
−20
Unit
mW
mW
mA
mA
°C
°C
Fig.2 Forward current falloff
V
V
V
AMBIENT TEMPERATURE : Ta (˚C)
AMBIENT TEMPERATURE : Ta (˚C)
P
D
Unit
nm
mA
mA
mA
nm
nm
µA
µA
µs
µs
µs
V
V
0
0
P
C
20
20
I
V
V
I
I
I
I
V
I
∗ Non-coherent Infrared light emitting diode used.
V
∗ This product is not designed to be protected against electromagnetic wave.
F
F
F
F
F
F
= 50mA
R
CE
= 5mA, V
= 20mA, V
= 5mA, V
= 20mA, I
CC
= 50mA
CC
= 5V
= 10V
= 5V, I
= 5V, I
40
40
F
C
CE
CE
C
= 20mA, R
= 1mA, R
CE
= 0.1mA
60
60
= 5V
= 5V
= 5V
80
80
L
= 100Ω
L
= 100Ω
100
100
Conditions
−
−
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
1) Ultraminiature SMD type.
2) Gap 1.2mm.
Applications
Features
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
0
−5
Fig.3 Forward current vs. forward
0
Fig.6 Relative output vs. ambient
−4
0
AMBIENT TEMPERATURE : Ta (˚C)
−3
0
FORWARD VOLTAGE : V
temperature
voltage
−2
0
5
−1
0
0
10
10
20
1,2,3,4,5,6,7,8,9
30
10
40
50
15
F
(V)
60
I
I
F
F
I
F
=10mA
=8mA
=5mA
70
80
20
90
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
−40
0
Dimensions (Unit : mm)
Fig.10
AMBIENT TEMPERATURE : Ta (˚C)
Fig.7 Collector current vs.
−20
FORWARD CURRENT : I
Optical axis center
Dark current vs.
ambient temperature
5
forward current
0
No.10
No.4
No.3
No.1
No.2
No.5
No.7
No.9
20
10
40
0.32±0.15
(0.35)
Cathode
Anode
60
15
F
(mA)
No.8
No.6
80
LED side
100
20
2.8
1.05
1.2
A
A'
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Fig.11
100
PT side
10
1
COLLECTOR TO EMITTER VOLTAGE : V
C0.2
0
0.1
Stamp (year, week, day of the week)
Output characteristics
0.32±0.15
1.8
Fig.8 Response time vs.
COLLECTOR CURRENT : I
0.2
line 2
line 1
Side electrode
Au plating
(0.35)
Collector
collector current (I )
Emitter
0.4
1
0.6
line 3
0.8
C
(
mA
Cross-section A-A'
)
CE
(V)
10
1
Cathode
Anode
0.3
Notes:
1.
2. Dimension in parenthesis are
shall be ±0.2 .
show for reference.
Unspecified tolerance
Emitter
100
Collector
10
1
0.1
COLLECTOR CURRENT : I
Fig.9 Response time vs.
collector current (II )
1
line 3
line 2
line 1
C
(
mA
)
10
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