FDPF5N50TYDTU Fairchild Semiconductor, FDPF5N50TYDTU Datasheet - Page 3

• Manufacturer Part Number: FDPF5N50TYDTU
• Description: MOSFET N-CH 500V TO-220FP-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF5N50TYDTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5N50 / FDPF5N50 Rev. A
Typical Performance Characteristics
1000
0.04
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
750
500
250
0.1
Figure 1. On-Region Characteristics
3.0
2.5
2.0
1.5
1.0
20
10
1
0
0.1
0.1
0
V
GS
=
10.0V
15.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
Drain Current and Gate Voltage
V
DS
DS
, Drain-Source Voltage [V]
3
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
1
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
6
V
GS
*Notes:
= 10V
1. 250
2. T
C
C
C
*Note: T
iss
oss
rss
C
= 25
μ
(
s Pulse Test
C ds = shorted
V
*Note:
9
GS
o
1. V
2. f = 1MHz
C
10
10
J
= 20V
= 25
GS
= 0V
o
C
)
30
12
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.1
20
10
10
70
10
1
8
6
4
2
0
1
4
0.4
0
Variation vs. Source Current
V
and Temperature
SD
, Body Diode Forward Voltage [V]
V
5
Q
GS
150
g
,Gate-Source Voltage[V]
, Total Gate Charge [nC]
0.8
o
V
V
V
4
150
C
DS
DS
DS
o
= 100V
= 250V
= 400V
C
6
25
-55
o
*Notes:
C
1. V
2. 250
o
C
*Notes:
1. V
2. 250
25
DS
1.2
8
o
*Note: I
μ
GS
C
= 20V
s Pulse Test
μ
7
= 0V
s Pulse Test
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D
= 5A
1.6
8
12