FDPF18N20FT Fairchild Semiconductor, FDPF18N20FT Datasheet - Page 3

MOSFET N-CH 200V 18A TO-220F-3

FDPF18N20FT

Manufacturer Part Number
FDPF18N20FT
Description
MOSFET N-CH 200V 18A TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF18N20FT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 25V
Power - Max
41W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Forward Transconductance Gfs (max / Min)
13.6 S
Drain-source Breakdown Voltage
200 V
Continuous Drain Current
18 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF18N20FT
Manufacturer:
ON/安森美
Quantity:
20 000
FDP18N20F / FDPF18N20FT Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
2000
1500
1000
0.25
0.20
0.15
0.10
Figure 1. On-Region Characteristics
500
10
50
1
0
0.1
0.1
0
V
GS
=
Drain Current and Gate Voltage
V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
10
DS
DS
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
20
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
V
GS
1
= 10V
*Notes:
1. 250
2. T
30
*Note: T
C
C
= 25
V
C
µ
C
GS
oss
s Pulse Test
(
iss
rss
C ds = shorted
*Note:
o
= 20V
C
1. V
2. f = 1MHz
40
10
J
= 25
GS
= 0V
o
C
)
10
50
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
30
10
10
10
1
8
6
4
2
0
1
4
0.0
0
V
SD
Variation vs. Source Current
0.4
and Temperature
, Body Diode Forward Voltage [V]
V
Q
6
GS
g
V
V
V
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
DS
DS
DS
5
150
150
= 40V
= 100V
= 160V
0.8
o
o
C
C
12
*Notes:
1. V
2. 250
1.2
25
*Notes:
1. V
2. 250
25
o
DS
*Note: I
C
6
o
GS
µ
= 20V
C
s Pulse Test
µ
= 0V
s Pulse Test
18
1.6
D
= 18A
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