FDPF18N20FT Fairchild Semiconductor, FDPF18N20FT Datasheet - Page 4

• Manufacturer Part Number: FDPF18N20FT
• Description: MOSFET N-CH 200V 18A TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF18N20FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 41W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms
• Forward Transconductance Gfs (max / Min): 13.6 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 18 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP18N20F / FDPF18N20FT Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 8-2. Maximum Safe Operating Area
0.01
100
0.1
1.2
1.1
1.0
0.9
0.8
10
1
-100
1
Operation in This Area
is Limited by R
-50
vs. Temperature
- FDPF18N20FT
T
V
J
DS
, Junction Temperature [
, Drain-Source Voltage [V]
0.01
0
Figure 10-1. Transient Thermal Response Curve - FDP18N20F
10
0.1
DS(on)
1
2
*Notes:
10
1. T
2. T
3. Single Pulse
Single pulse
0.02
0.05
0.01
-5
0.5
0.2
0.1
50
C
J
= 150
= 25
o
C
o
100
10
C
100
-4
*Notes:
1. V
2. I
o
C]
D
150
GS
= 250
100
1ms
DC
10
10ms
= 0V
10
µ
µ
Rectangular Pulse Duration [sec]
s
µ
s
-3
A
200
600
(Continued)
10
-2
4
10
Figure 8-1. Maximum Safe Operating Area
-1
Figure 9. Maximum Drain Current
0.01
100
20
16
12
0.1
10
8
4
0
1
25
*Notes:
1
1. Z
2. Duty Factor, D= t
3. T
P
10
Operation in This Area
is Limited by R
DM
θ
JM
0
JC
- T
(t) = 1.2
50
- FDP18N20F
T
V
C
C
, Case Temperature
vs. Case Temperature
DS
= P
t
1
, Drain-Source Voltage [V]
t
2
10
o
DM
C/W Max.
1
10
DS(on)
75
* Z
1
*Notes:
θ
/t
JC
1. T
2. T
3. Single Pulse
2
(t)
C
J
10
= 150
= 25
100
2
o
C
o
[
C
o
C
100
]
125
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100
20
10ms
1ms
DC
µ
µ
s
150
s
600