MOSFET N-CH 500V TO-220F-3

FDPF5N50UT

Manufacturer Part NumberFDPF5N50UT
DescriptionMOSFET N-CH 500V TO-220F-3
ManufacturerFairchild Semiconductor
SeriesFRFET™
FDPF5N50UT datasheet
 


Specifications of FDPF5N50UT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2 Ohm @ 2A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C4AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs15nC @ 10VInput Capacitance (ciss) @ Vds650pF @ 25V
Power - Max28WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Formed LeadsTransistor PolarityN-Channel
Resistance Drain-source Rds (on)1.65 OhmsDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage30 VContinuous Drain Current4 A
Power Dissipation28 WForward Transconductance Gfs (max / Min)4.8 S
Gate Charge Qg11 nCMounting StyleThrough Hole
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP5N50U / FDPF5N50UT
N-Channel MOSFET, FRFET
500V, 4A, 2.0
Features
• R
= 1.65 ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 11nC)
• Low C
( Typ. 5pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Case to Sink Typ.
CS
R
Thermal Resistance, Junction to Ambient
JA
©2009 Fairchild Semiconductor Corporation
FDP5N50U / FDPF5N50UT Rev. A-1
Description
= 2A
These N-Channel enhancement mode power field effect transis-
D
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
TO-220F
G
D
S
FDPF Series
(potted)
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
November2009
Ultra FRFET
D
G
S
FDP5N50U
FDPF5N50UT
500
±30
4
4*
2.4
2.4*
(Note 1)
16
16*
(Note 2)
216
(Note 1)
4
(Note 1)
8.5
(Note 3)
4.5
85
28
0.67
0.22
-55 to +150
300
FDP5N50U
FDPF5N50UT
1.4
4.5
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF5N50UT Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FDP5N50U / FDPF5N50UT Rev. A-1 Description = 2A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to mini- ...

  • Page 2

    ... Starting 4A, di/dt 200A/s, V  Starting DSS 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP5N50U / FDPF5N50UT Rev. A unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250 ...

  • Page 3

    ... GS 1.8 1 Drain Current [A] D Figure 5. Capacitance Characteristics 1000 C iss = oss = rss = C gd 800 600 400 200 0 0 Drain-Source Voltage [V] DS FDP5N50U / FDPF5N50UT Rev. A-1 Figure 2. Transfer Characteristics 10 1 *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 20V GS o *Note: T ...

  • Page 4

    ... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP5N50U 3 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP5N50U / FDPF5N50UT Rev. A-1 (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes  250 A D 0.01 75 125 175 Figure 10. Maximum Drain Current  ...

  • Page 5

    ... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDPF5N50UT 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.003 -5 10 FDP5N50U / FDPF5N50UT Rev. A-1 (Continued Rectangular Pulse Duration [sec *Notes (t) = 4.5 C/W Max.  Duty Factor (t)  www.fairchildsemi.com ...

  • Page 6

    ... FDP5N50U / FDPF5N50UT Rev. A-1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP5N50U / FDPF5N50UT Rev. A-1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP5N50U / FDPF5N50UT Rev. A-1 TO-220 8 www.fairchildsemi.com ...

  • Page 9

    ... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP5N50U / FDPF5N50UT Rev. A-1 (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N50U / FDPF5N50UT Rev. A-1 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...