FDPF10N50UT

Manufacturer Part NumberFDPF10N50UT
DescriptionMOSFET N-CH 500V 8A TO-220F-3
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF10N50UT datasheet
 


Specifications of FDPF10N50UT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.05 Ohm @ 4A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C8AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs24nC @ 10VInput Capacitance (ciss) @ Vds1130pF @ 25V
Power - Max42WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Formed LeadsLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP10N50U / FDPF10N50UT
N-Channel MOSFET
500V, 8A, 1.05
Features
• R
= 0.85 ( Typ.) @ V
= 10V, I
DS(on)
GS
• Low Gate Charge ( Typ. 18nC)
• Low C
( Typ. 9pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Junction to Ambient
JA
©2008 Fairchild Semiconductor Corporation
FDP10N50U / FDPF10N50UT Rev. A-1
Description
= 4A
These N-Channel enhancement mode power field effect transis-
D
tors are p roduced using Fa irchild’s proprietary, planar stripe,
DMOS technology.
This advan ce technology has been especially tailored to mini-
mize on-state r esistance, prov ide sup erior switching per for-
mance, and wit hstand high ener gy pulse in th e avalanche an d
commutation mode. T hese devices are w ell su ited fo r high ef fi-
cient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
November 2009
UniFET
D
G
S
FDP10N50U
FDPF10N50UT
Units
500
V
±30
V
8
8*
A
4.8
4.8*
32
32*
A
320
mJ
8
A
12.5
mJ
20
V/ns
125
42
W
o
1.0
0.33
W/
C
o
-55 to +150
C
o
300
C
Units
FDP10N50U
FDPF10N50UT
1.0
3.0
o
C/W
62.5
62.5
www.fairchildsemi.com
TM
tm

FDPF10N50UT Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2008 Fairchild Semiconductor Corporation FDP10N50U / FDPF10N50UT Rev. A-1 Description = 4A These N-Channel enhancement mode power field effect transis- D tors are p roduced using Fa irchild’s proprietary, planar stripe, DMOS technology. This advan ce technology has been especially tailored to mini- ...

  • Page 2

    ... Starting 8A, di/dt 200A/s, V BV , Starting DSS 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP10N50U / FDPF10N50UT Rev. A unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250 ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = rss = C gd 1500 C oss C iss 1000 500 C rss 0 0 Drain-Source Voltage [V] DS FDP10N50U / FDPF10N50UT Rev. A-1 Figure 2. Transfer Characteristics *Notes: 1. 250 s Pulse Test  0 Figure 4. Body Diode Forward Voltage 20V GS o *Note: T ...

  • Page 4

    ... T , Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF10N50UT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDP10N50U / FDPF10N50UT Rev. A-1 (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes: 1 ...

  • Page 5

    ... FDP10N50U / FDPF10N50UT Rev. A-1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP10N50U / FDPF10N50UT Rev. A-1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions FDP10N50U / FDPF10N50UT Rev. A-1 TO-220 7 www.fairchildsemi.com ...

  • Page 8

    ... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP10N50U / FDPF10N50UT Rev. A-1 TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP10N50U / FDPF10N50UT Rev. A-1 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...