FDPF12N50UT

Manufacturer Part NumberFDPF12N50UT
DescriptionMOSFET N-CH 500V TO-220F-3
ManufacturerFairchild Semiconductor
SeriesFRFET™
FDPF12N50UT datasheet
 

Specifications of FDPF12N50UT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs800 mOhm @ 5A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C10AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs30nC @ 10VInput Capacitance (ciss) @ Vds1395pF @ 25V
Power - Max42WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Formed LeadsLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP12N50U / FDPF12N50UT
N-Channel MOSFET, FRFET
500V, 10A, 0.8Ω
Features
• R
= 0.65Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 21nC)
• Low C
( Typ. 11pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP12N50U / FDPF12N50UT Rev. A
Description
= 5A
These N-Channel enhancement mode power field effect transis-
D
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
November 2007
Ultra FRFET
D
G
S
FDP12N50U
FDPF12N50UT Units
500
±30
10
10*
6
6*
(Note 1)
40
40*
(Note 2)
456
(Note 1)
10
(Note 1)
16.5
(Note 3)
4.5
165
42
1.33
0.3
-55 to +150
300
FDP12N50U
FDPF12N50UT Units
0.75
3.0
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
o
C/W

FDPF12N50UT Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Ambient θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP12N50U / FDPF12N50UT Rev. A Description = 5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

  • Page 2

    ... Starting ≤ 10A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP12N50U / FDPF12N50UT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = rss = C gd 1500 C iss 1000 C oss 500 C rss 0 0 Drain-Source Voltage [V] DS FDP12N50U / FDPF12N50UT Rev. Figure 2. Transfer Characteristics 30 10 *Notes: 1. 250 µ s Pulse Test 4 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note: T ...

  • Page 4

    ... T , Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature - FDPF12N50UT Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF12N50UT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single pulse 1E FDP12N50U / FDPF12N50UT Rev. (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes ...

  • Page 5

    ... FDP12N50U / FDPF12N50UT Rev. Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP12N50U / FDPF12N50UT Rev. Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions FDP12N50U / FDPF12N50UT Rev. TO-220 7 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP12N50U / FDPF12N50UT Rev. TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 –0.05 ±0.20 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP12N50U / FDPF12N50UT Rev. Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...