MOSFET N-CH 600V TO-220F-3

FDPF10N60ZUT

Manufacturer Part NumberFDPF10N60ZUT
DescriptionMOSFET N-CH 600V TO-220F-3
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF10N60ZUT datasheet
 

Specifications of FDPF10N60ZUT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs800 mOhm @ 4.5A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C9AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs40nC @ 10VInput Capacitance (ciss) @ Vds1980pF @ 25V
Power - Max42WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Formed LeadsTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.65 OhmsDrain-source Breakdown Voltage600 V
Gate-source Breakdown Voltage30 VContinuous Drain Current9 A
Power Dissipation42 WForward Transconductance Gfs (max / Min)12.5 S
Gate Charge Qg31 nCMounting StyleThrough Hole
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP10N60ZU / FDPF10N60ZUT
N-Channel MOSFET, FRFET
600V, 9A, 0.8Ω
Features
• R
= 0.65Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 31nC)
• Low C
( Typ. 15pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2009 Fairchild Semiconductor Corporation
FDP10N60ZU/FDPF10N60ZUT Rev. A
Description
= 4.5A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 3)
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
April 2009
UniFET
D
D
G
G
S
S
FDP10N60ZU FDPF10N60ZUT
600
±30
9
9*
5.4
5.4*
36
36*
100
(Note 1)
9
18
20
180
42
1.45
0.3
-55 to +150
300
FDP10N60ZU FDPF10N60ZUT Units
0.7
3.0
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
switching
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
o
C/W

FDPF10N60ZUT Summary of contents

  • Page 1

    ... Pulsed (Note 1) (Note 2) (Note 1) (Note Derate above 25 C Parameter 1 April 2009 UniFET FDP10N60ZU FDPF10N60ZUT 600 ± 5.4 5.4* 36 36* 100 (Note 180 42 1.45 0.3 -55 to +150 300 FDP10N60ZU FDPF10N60ZUT Units 0.7 3.0 0.5 - 62.5 62.5 www.fairchildsemi.com TM tm switching Units V/ C/W ...

  • Page 2

    ... Repetitive Rating: Pulse width limited by maximum junction temperature 2mH 10A 50V 25Ω, Starting ≤ 10A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics FDP10N60ZU/FDPF10N60ZUT Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250μ 0V, T ...

  • Page 3

    ... D Figure 5. Capacitance Characteristics 3000 C iss = shorted oss = oss 2500 C rss = C gd 2000 C iss 1500 1000 500 C rss 0 0 Drain-Source Voltage [V] DS FDP10N60ZU/FDPF10N60ZUT Rev. A Figure 2. Transfer Characteristics μ s Pulse Test Figure 4. Body Diode Forward Voltage V = 20V Note : Figure 6. Gate Charge Characteristics * Note: 1 ...

  • Page 4

    ... T , Junction Temperature [ J Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature [ C Figure 10. Transient Thermal Response Curve - FDPF10N60ZUT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP10N60ZU/FDPF10N60ZUT Rev. A (Continued) Figure 8. Maximum Safe Operating Area 100 10 1 0.1 * Notes : μ ...

  • Page 5

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP10N60ZU/FDPF10N60ZUT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP10N60ZU/FDPF10N60ZUT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions 9.90 ø3.60 1.27 ±0.10 2.54TYP [2.54 ] ±0.20 10.00 FDP10N60ZU/FDPF10N60ZUT Rev. A TO-220 ±0.20 (8.70) ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 #1 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP10N60ZU/FDPF10N60ZUT Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) 2.54TYP [2.54 ] ±0.20 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP10N60ZU/FDPF10N60ZUT Rev. A F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...