FDPF10N60ZUT Fairchild Semiconductor, FDPF10N60ZUT Datasheet - Page 2

• Manufacturer Part Number: FDPF10N60ZUT
• Description: MOSFET N-CH 600V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF10N60ZUT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1980pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 42 W
• Forward Transconductance Gfs (max / Min): 12.5 S
• Gate Charge Qg: 31 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N60ZU/FDPF10N60ZUT Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2mH, I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
DS(on)
iss
oss
rss
SD
g(tot)
gs
gd
rr
SD
FDPF10N60ZUT
Device Marking
Symbol
DSS
J
≤ 10A, di/dt ≤ 200A/μs, V
FDP10N60ZU
DSS
AS
= 10A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDPF10N60ZUT
FDP10N60ZU
G
= 25Ω, Starting T
DSS
Device
, Starting T
Parameter
J
T
J
= 25°C
C
= 25°C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
GS
GS
DS
DD
GS
GS
DS
DS
GS
G
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 25Ω , V
= 600V, V
= 480V, T
= 0V, I
= ±30V, V
= 0V, I
= V
= 10V, I
= 40V, I
= 25V, V
= 480V, I
= 10V
= 300V, I
DS
Test Conditions
, I
2
SD
SD
D
Reel Size
D
D
GS
GS
GS
D
D
= 10A
= 4.5A
= 10A
GS
C
= 4.5A
DS
= 250μA
= 10A
= 10A
= 125
= 10V
= 0V
= 0V, T
-
-
= 0V
= 0V
o
C
J
= 25
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
-
Min.
600
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1490
Typ.
0.65
12.5
230
0.8
25
40
95
60
45
52
15
31
12
8
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
1980
200
130
250
±10
240
5.0
0.8
1.6
25
25
40
60
90
36
9
50
50
-
-
-
-
-
-
-
Units
V/
pF
pF
pF
nC
nC
nC
nC
μA
μA
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V
o
C