FDPF10N60ZUT Fairchild Semiconductor, FDPF10N60ZUT Datasheet - Page 7

• Manufacturer Part Number: FDPF10N60ZUT
• Description: MOSFET N-CH 600V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF10N60ZUT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1980pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 42 W
• Forward Transconductance Gfs (max / Min): 12.5 S
• Gate Charge Qg: 31 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N60ZU/FDPF10N60ZUT Rev. A
Mechanical Dimensions
[2.54
2.54TYP
1.27
±0.20
±0.10
]
ø3.60
10.00
9.90
(8.70)
±0.20
±0.10
±0.20
[2.54
1.52
0.80
2.54TYP
±0.10
±0.10
±0.20
TO-220
]
7
0.50
+0.10
–0.05
2.40
4.50
1.30
www.fairchildsemi.com
±0.20
±0.20
+0.10
–0.05