FDPF12N60NZ Fairchild Semiconductor, FDPF12N60NZ Datasheet - Page 3

• Manufacturer Part Number: FDPF12N60NZ
• Description: MOSFET N-CH 600V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF12N60NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1676pF @ 25V
• Power - Max: 39W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N60NZ / FDPF12N60NZ Rev. A
Typical Performance Characteristics
5000
1000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
1.0
0.9
0.8
0.7
0.6
0.5
0.1
Figure 1. On-Region Characteristics
30
10
10
1
0.1
0.1
0
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
* Note:
V
GS
1. V
2. f = 1MHz
=
5
GS
V
V
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
DS
DS
= 0V
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
10
(
C ds = shorted
1
1
V
GS
15
*Notes:
= 10V
1. 250
2. T
* Note : T
)
C
20
= 25

s Pulse Test
V
o
GS
C
= 20V
J
10
= 25
25
10
C
C
C
oss
iss
o
rss
C
20
30
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
100
0.1
10
10
10
1
8
6
4
2
0
1
0.4
0
3
V
SD
0.6
Variation vs. Source Current
and Temperature
, Body Diode Forward Voltage [V]
6
4
Q
V
g
150
GS
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
o
C
V
V
V
DS
DS
DS
0.8
12
5
= 120V
= 300V
= 480V
150
o
C
25
* Notes :
-55
1.0
1. V
2. 250
18
Notes:
1. V
2. 250
o
6
C
o
* Note : I
C
DS
25
GS

o

= 20V
s Pulse Test
C
= 0V
s Pulse Test
1.2
24
D
7
= 12A
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1.4
30
8