FDPF12N60NZ Fairchild Semiconductor, FDPF12N60NZ Datasheet - Page 4
FDPF12N60NZ
Manufacturer Part Number
FDPF12N60NZ
Description
MOSFET N-CH 600V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet
1.FDPF12N60NZ.pdf
(10 pages)
Specifications of FDPF12N60NZ
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1676pF @ 25V
Power - Max
39W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF12N60NZ
Manufacturer:
CHAMPION
Quantity:
1 670
Part Number:
FDPF12N60NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP12N60NZ / FDPF12N60NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 11. Maximum Drain Current vs Case Temperature
Figure 9. Maximum Safe Operating Area
0.01
100
1.2
1.1
1.0
0.9
0.8
0.1
10
1
15
12
-80
9
6
3
0
1
25
Operation in This Area
is Limited by R
-40
vs. Temperature
-FDPF12N60NZ
T
50
J
V
T
, Junction Temperature
DS
C
, Case Temperature
, Drain-Source Voltage [V]
0
10
DS(on)
* Notes :
1. T
2. T
3. Single Pulse
75
40
C
J
= 150
= 25
o
DC
100
o
C
C
80
100
10ms
* Notes :
[
1ms
o
1. V
2. I
[
C
100
o
]
C
D
GS
120
125
]
= 250uA
s
= 0V
30
s
160
1000
150
(Continued)
4
Figure 10. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
0.01
100
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
1
0
-80
1
Operation in This Area
is Limited by R
-40
-FDP12N60NZ
vs Temperature
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
0
DS(on)
* Notes :
1. T
2. T
3. Single Pulse
C
J
40
= 150
= 25
o
o
C
C
DC
100
80
10ms
* Notes :
1ms
1. V
2. I
[
100
o
C
D
GS
120
]
= 6A
s
www.fairchildsemi.com
= 10V
10
1000
160
s