MOSFET N-CH 500V 15A TO-220F-3

FDPF16N50UT

Manufacturer Part NumberFDPF16N50UT
DescriptionMOSFET N-CH 500V 15A TO-220F-3
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF16N50UT datasheet
 

Specifications of FDPF16N50UT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs480 mOhm @ 7.5A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C15AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs45nC @ 10VInput Capacitance (ciss) @ Vds1945pF @ 25V
Power - Max38.5WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Formed LeadsTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.37 OhmsDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage30 VContinuous Drain Current15 A
Power Dissipation38.5 WForward Transconductance Gfs (max / Min)23 S
Gate Charge Qg32 nCMounting StyleThrough Hole
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 1/9

Download datasheet (242Kb)Embed
Next
FDP16N50U / FDPF16N50UT
N-Channel MOSFET, FRFET
500V, 15A, 0.48
Features
• R
= 0.37 ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 32nC)
• Low C
( Typ. 20pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
G
D
S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Junction to Ambient
CS
R
Thermal Resistance, Junction to Ambient
JA
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. A1
Description
= 7.5A
These N-Channel enhancement mode power field effect transis-
D
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
October 2009
UniFET
D
G
S
FDP16N50U
FDPF16N50UT Units
500
±30
15
15*
9
9*
(Note 1)
60
60*
(Note 2)
610
(Note 1)
15
(Note 1)
20
(Note 3)
20
200
38.5
1.59
0.3
-55 to +150
300
FDP16N50U
FDPF16N50UT Units
0.63
3.3
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
o
C/W

FDPF16N50UT Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Ambient CS R Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FDP16N50U / FDPF16N50UT Rev. A1 Description = 7.5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

  • Page 2

    ... Starting 16A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDP16N50U / FDPF16N50UT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250 ...

  • Page 3

    ... Drain Current and Gate Voltage 0.6 0 10V GS 0.4 0.3 0 Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C oss 2000 C iss 1000 C rss Drain-Source Voltage [V] DS FDP16N50U / FDPF16N50UT Rev. Figure 2. Transfer Characteristics Notes :  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 20V Note : 0.2 Figure 6 ...

  • Page 4

    ... Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Tem perature [ J Figure 9. Maximum Drain Current vs. Case Temperature - FDPF16N50UT Case Temperature [ C Figure 10. Transient Thermal Response Curve - FDPF16N50UT FDP16N50U / FDPF16N50UT Rev. (Continued) Figure 8. Maximum Safe Operating Area Notes : -  250 ...

  • Page 5

    ... FDP16N50U / FDPF16N50UT Rev. Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP16N50U / FDPF16N50UT Rev. Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions 9.90 ø3.60 1.27 ±0.10 2.54TYP ±0.20 [2.54 ] 10.00 FDP16N50U / FDPF16N50UT Rev. TO-220 ±0.20 (8.70) ±0.10 1.52 ±0.10 ±0.10 0.80 2.54TYP ±0.20 [2.54 ] ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 8

    ... Package Dimensions * Front/Back Side Isolation Voltage : AC2500V FDP16N50U / FDPF16N50UT Rev. TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP16N50U / FDPF16N50UT Rev. FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...