FDPF16N50UT Fairchild Semiconductor, FDPF16N50UT Datasheet - Page 3

MOSFET N-CH 500V 15A TO-220F-3

FDPF16N50UT

Manufacturer Part Number
FDPF16N50UT
Description
MOSFET N-CH 500V 15A TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF16N50UT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1945pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.37 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
15 A
Power Dissipation
38.5 W
Forward Transconductance Gfs (max / Min)
23 S
Gate Charge Qg
32 nC
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF16N50UT
Manufacturer:
FSC
Quantity:
245
Part Number:
FDPF16N50UT
Manufacturer:
FAIRCHILD
Quantity:
8 000
FDP16N50U / FDPF16N50UT Rev.
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
4000
3000
2000
1000
Figure 1. On-Region Characteristics
10
0.6
0.5
0.4
0.3
0.2
10
10
10
-1
2
1
0
10
0
0
10
-1
-1
Top :
Bottom : 5.5 V
5
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
Drain Current and Gate Voltage
10
V
C
V
iss
DS
DS
, Drain-Source Voltage [V]
C
, Drain-Source Voltage [V]
C
I
rss
10
D
oss
15
10
, Drain Current [A]
0
0
V
GS
= 10V
20
25
C
C
C
iss
oss
rss
= C
= C
= C
V
GS
10
gs
gd
10
* Notes :
ds
30
* Note : T
+ C
1. 250
2. T
1
+ C
= 20V
1
gd
gd
C
(C
= 25
* Note :
s Pulse Test
ds
J
1. V
2. f = 1 MHz
o
= 25
= shorted)
35
C
GS
o
C
= 0 V
40
3
10
10
10
10
12
10
Figure 2. Transfer Characteristics
1
0
Figure 4. Body Diode Forward Voltage
8
6
4
2
0
1
0
Figure 6. Gate Charge Characteristics
2
0.2
0
0.4
0.6
25
150
4
o
C
o
25
150
C
10
Variation vs. Source Current
0.8
and Temperature
o
V
V
C
o
GS
Q T t l G t Ch
C
SD
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
1.0
V
V
V
DS
DS
DS
6
= 400V
= 250V
= 100V
1.2
20
1.4
8
1.6
[ C]
1.8
* Notes :
* Notes :
* Note : I
30
1. V
2. 250
1. V
2. 250
2.0
10
GS
DS
= 0V
= 40V
s Pulse Test
D
s Pulse Test
= 15A
2.2
www.fairchildsemi.com
2.4
12
40

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