MOSFET N-CH 600V TO-220F-3

FDPF17N60NT

Manufacturer Part NumberFDPF17N60NT
DescriptionMOSFET N-CH 600V TO-220F-3
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF17N60NT datasheet
 

Specifications of FDPF17N60NT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs340 mOhm @ 8.5A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C17AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs65nC @ 10VInput Capacitance (ciss) @ Vds3040pF @ 25V
Power - Max62.5WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Formed LeadsConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.29 Ohms
Forward Transconductance Gfs (max / Min)21 SDrain-source Breakdown Voltage600 V
Continuous Drain Current17 APower Dissipation62.5 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Fall Time62 nsMinimum Operating Temperature- 55 C
Rise Time79 nsLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP17N60N / FDPF17N60NT
N-Channel MOSFET
600V, 17A, 0.34Ω
Features
• R
= 0.29Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low Gate Charge ( Typ. 48nC)
• Low C
( Typ. 23pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
TO-220
FDP Series
G D S
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Heat Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2009 Fairchild Semiconductor Corporation
FDP17N60N/FDPF17N60NT Rev. A
Description
= 8.5A
These
N-Channel
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
D
G
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
July 2009
UniFET
enhancement mode power field effect
D
G
S
FDP17N60N FDPF17N60NT
600
±30
17
17*
10.2
10.2*
(Note 1)
68
68*
(Note 2)
838
(Note 1)
17
(Note 1)
24.5
(Note 3)
10
245
62.5
2.0
0.5
-55 to +150
300
FDP17N60N FDPF17N60NT
0.51
2.0
-
-
62.5
62.5
www.fairchildsemi.com
TM
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF17N60NT Summary of contents

  • Page 1

    ... FDP17N60N / FDPF17N60NT N-Channel MOSFET 600V, 17A, 0.34Ω Features • 0.29Ω ( Typ.)@ V = 10V, I DS(on) GS • Low Gate Charge ( Typ. 48nC) • Low C ( Typ. 23pF) rss • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant TO-220 ...

  • Page 2

    ... R = 25Ω, Starting ≤ 17A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP17N60N/FDPF17N60NT Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250µA, V ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 10000 1000 *Note: 100 1MHz C iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FDP17N60N/FDPF17N60NT Rev. A Figure 2. Transfer Characteristics µ s Pulse Test Figure 4. Body Diode Forward Voltage = 10V V = 20V GS o *Note Figure 6. Gate Charge Characteristics C iss C oss ...

  • Page 4

    ... 150 Single Pulse 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 Single pulse 0.003 -5 10 FDP17N60N/FDPF17N60NT Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 250 µ 0.0 50 100 150 Figure 10. Maximum Drain Current 20 10 µ s 100 µ ...

  • Page 5

    ... FDP17N60N/FDPF17N60NT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP17N60N/FDPF17N60NT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Mechanical Dimensions FDP17N60N/FDPF17N60NT Rev. A TO-220 7 www.fairchildsemi.com ...

  • Page 8

    ... Package Dimensions * Front/Back Side Isolation Voltage : 4000V FDP17N60N/FDPF17N60NT Rev. A TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP17N60N/FDPF17N60NT Rev. A F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...