FDPF17N60NT Fairchild Semiconductor, FDPF17N60NT Datasheet - Page 2

MOSFET N-CH 600V TO-220F-3

FDPF17N60NT

Manufacturer Part Number
FDPF17N60NT
Description
MOSFET N-CH 600V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF17N60NT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
340 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3040pF @ 25V
Power - Max
62.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohms
Forward Transconductance Gfs (max / Min)
21 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
17 A
Power Dissipation
62.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
62 ns
Minimum Operating Temperature
- 55 C
Rise Time
79 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF17N60NT
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
FDPF17N60NT
Manufacturer:
FAIRCHILD
Quantity:
262
Part Number:
FDPF17N60NT
Manufacturer:
Fairchi/ON
Quantity:
17 406
Company:
Part Number:
FDPF17N60NT
Quantity:
2 000
FDP17N60N/FDPF17N60NT Rev. A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.8mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
∆T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
FDPF17N60NT
J
≤ 17A, di/dt ≤ 200A/µs, V
DSS
FDP17N60N
AS
= 17A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDPF17N60NT
FDP17N60N
G
DSS
= 25Ω, Starting T
Device
, Starting T
Parameter
J
T
= 25°C
C
J
= 25°C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
DS
GS
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 600V, V
= 480V, V
= 0V, I
= ±30V, V
= 20V, I
= 25V, V
= 480V I
= 300V, I
= 10V, R
= 0V, I
= V
= 10V, I
= 10V
DS
Test Conditions
, I
SD
2
SD
D
Reel Size
D
D
D
GS
GS
D
GEN
= 8.5A
= 17A
= 17A
GS
GS
= 8.5A
DS
= 250µA
= 17A
= 17A
= 0V
= 0V, T
-
-
= 0V
= 0V,T
= 0V
= 25Ω
C
C
= 150
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
C
o
C
o
Tape Width
C
-
-
Min.
600
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2285
Typ.
0.29
575
310
128
7.2
0.8
21
23
48
13
20
48
79
62
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
3040
0.34
410
106
168
266
134
1.4
5.0
10
35
65
74
68
1
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
µA
pF
pF
pF
µC
nA
ns
ns
ns
ns
ns
V
A
A
V
V
S
o
C

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