FDPF17N60NT Fairchild Semiconductor, FDPF17N60NT Datasheet - Page 3

MOSFET N-CH 600V TO-220F-3

FDPF17N60NT

Manufacturer Part Number
FDPF17N60NT
Description
MOSFET N-CH 600V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF17N60NT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
340 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3040pF @ 25V
Power - Max
62.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohms
Forward Transconductance Gfs (max / Min)
21 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
17 A
Power Dissipation
62.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
62 ns
Minimum Operating Temperature
- 55 C
Rise Time
79 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF17N60NT
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
FDPF17N60NT
Manufacturer:
FAIRCHILD
Quantity:
262
Part Number:
FDPF17N60NT
Manufacturer:
Fairchi/ON
Quantity:
17 406
Company:
Part Number:
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Quantity:
2 000
FDP17N60N/FDPF17N60NT Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
10000
Figure 1. On-Region Characteristics
1000
200
100
100
0.1
0.6
0.5
0.4
0.3
0.2
10
10
1
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
=
Drain Current and Gate Voltage
15.0 V
GS
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
V
10
= 0V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
(
C ds = shorted
*Notes:
20
1
1. 250
2. T
1
V
GS
C
= 10V
= 25
µ
s Pulse Test
30
)
o
C
*Note: T
V
GS
= 20V
40
10
C
= 25
10
C
C
o
C
C
oss
rss
iss
20
50
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
200
100
100
10
10
10
8
6
4
2
0
1
1
0.2
0
4
V
0.4
SD
150
Variation vs. Source Current
and Temperature
10
, Body Diode Forward Voltage [V]
5
Q
V
o
150
C
GS
g
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
o
C
20
V
V
V
6
DS
DS
DS
= 120V
= 300V
= 480V
0.8
-55
25
o
*Notes:
o
30
C
C
1. V
2. 250
25
7
*Notes:
1. V
2. 250
*Note: I
o
DS
C
GS
µ
= 20V
s Pulse Test
µ
= 0V
s Pulse Test
40
D
8
1.2
= 17A
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50
1.4
9

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