FDPF17N60NT Fairchild Semiconductor, FDPF17N60NT Datasheet - Page 6

• Manufacturer Part Number: FDPF17N60NT
• Description: MOSFET N-CH 600V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF17N60NT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 340 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3040pF @ 25V
• Power - Max: 62.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 17 A
• Power Dissipation: 62.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 62 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 79 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP17N60N/FDPF17N60NT Rev. A
( D r i v e r )
( D r i v e r )
( D U T )
( D U T )
( D U T )
( D U T )
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S D
S D
G S
G S
D S
D S
V
V
G S
G S
Peak Diode Recovery dv/dt Test Circuit & Waveforms
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G
D r i v e r
D r i v e r
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, B o d y D i o d e F o r w a r d C u r r e n t
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G a t e P u l s e P e r i o d
G a t e P u l s e P e r i o d
G a t e P u l s e P e r i o d
G a t e P u l s e W i d t h
G a t e P u l s e W i d t h
G a t e P u l s e W i d t h
B o d y D i o d e
B o d y D i o d e
S a m e T y p e
S a m e T y p e
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B o d y D i o d e R e c o v e r y d v / d t
B o d y D i o d e R e c o v e r y d v / d t
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B o d y D i o d e R e v e r s e C u r r e n t
B o d y D i o d e R e v e r s e C u r r e n t
c o n t r o l l e d b y p u l s e p e r i o d
c o n t r o l l e d b y p u l s e p e r i o d
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