STP80NF70

Manufacturer Part NumberSTP80NF70
DescriptionMOSFET N-CH 68V 98A TO-220AB
ManufacturerSTMicroelectronics
SeriesSTripFET™
STP80NF70 datasheet
 

Specifications of STP80NF70

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs9.8 mOhm @ 40A, 10VDrain To Source Voltage (vdss)68V
Current - Continuous Drain (id) @ 25° C98AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs75nC @ 10VInput Capacitance (ciss) @ Vds2550pF @ 25V
Power - Max190WMounting TypeThrough Hole
Package / Case*Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-10964-5  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
Page 1/13

Download datasheet (424Kb)Embed
Next
Features
Type
V
DSS
STP80NF70
68 V
Exceptional dv/dt capability
100% avalanche tested
Application
Switching applications
Description
The STP80NF70 is a N-channel Power MOSFET
realized with STMicroelectronics unique
STripFET™ process. It has specifically been
designed to minimize input capacitance and gate
charge. The device is therefore suitable in
advanced high-efficiency switching applications.
Table 1.
Device summary
Order code
STP80NF70
June 2010
N-channel 68 V, 0.0082 Ω , 98 A, TO-220
STripFET™ II Power MOSFET
R
DS(on)
I
D
max
< 0.0098 Ω
98 A
Figure 1.
Marking
80NF70
Doc ID 17610 Rev 1
STP80NF70
3
2
1
TO-220
Internal schematic diagram
Package
Packaging
TO-220
Tube
1/13
www.st.com
13

STP80NF70 Summary of contents

  • Page 1

    ... Application ■ Switching applications Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Table 1. ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 17610 Rev 1 STP80NF70 ...

  • Page 3

    ... STP80NF70 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope (3) E Single pulse avalanche energy AS T Storage temperature ...

  • Page 4

    ... Parameter Test conditions = MHz = Parameter Test conditions =4.7 Ω Figure 13 on page 9 Doc ID 17610 Rev 1 Min. Typ 250 µ 0.0082 0.0098 D Min. Typ 2550 - 550 175 Min. Typ = STP80NF70 Max. Unit V 1 µA 10 µA ±100 Ω Max. Unit - Max. Unit ...

  • Page 5

    ... STP80NF70 Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...

  • Page 6

    ... Figure 4. Output characteristics I D (A) V =10V GS 250 200 150 100 6/13 Figure 3. AM00935v2 100µs 1ms 10ms 10 V (V) DS Figure 5. AM00936v1 I D (A) 8V 250 7V 200 150 6V 100 (V) DS Doc ID 17610 Rev 1 STP80NF70 Thermal impedance Transfer characteristics V =10V AM00937v1 9 V (V) GS ...

  • Page 7

    ... STP80NF70 Figure 6. Normalized BV DSS V BR(DSS (norm) I =250µA D 1.2 1.1 1.0 0.9 0.8 - Figure 8. Gate charge vs gate-source voltage Figure (V) V =34V =80A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.0 0.9 0.8 0.7 0.6 - temperature Figure 7. AM00957v1 R DS(on) (mΩ) 9.5 8 ...

  • Page 8

    ... Electrical characteristics Figure 12. Source-drain diode forward characteristics V SD (V) 1.1 T =-55°C J 0.9 0.7 0.5 175°C 0 8/13 AM00956v1 25° (A) SD Doc ID 17610 Rev 1 STP80NF70 ...

  • Page 9

    ... STP80NF70 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Doc ID 17610 Rev 1 Test circuits ...

  • Page 10

    ... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/13 Doc ID 17610 Rev 1 STP80NF70 ® ...

  • Page 11

    ... STP80NF70 TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q 2.65 Doc ID 17610 Rev 1 Package mechanical data mm Typ Max 4.60 0.88 1.70 0.70 15.75 1.27 10.40 2.70 5.15 1.32 6 ...

  • Page 12

    ... Revision history 5 Revision history Table 8. Document revision history Date 11-Jun-2010 12/13 Revision 1 First release. Doc ID 17610 Rev 1 STP80NF70 Changes ...

  • Page 13

    ... STP80NF70 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...