STP80NF70 STMicroelectronics, STP80NF70 Datasheet - Page 4

• Manufacturer Part Number: STP80NF70
• Description: MOSFET N-CH 68V 98A TO-220AB
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF70

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 68V
• Current - Continuous Drain (id) @ 25° C: 98A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2550pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10964-5

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified).
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 17610 Rev 1
V
R
Figure 13 on page 9
I
V
V
V
V
V
V
V
V
V
V
D
DD
G
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
= 250 µA, V
=4.7 Ω, V
= 34 V, I
= V
= 10 V, I
= Max rating,
= Max rating @125 °C
= ±20 V
= 15 V, I
=25 V, f = 1 MHz,
= 0
=10 V
= 34 V, I
Test conditions
Test conditions
Test conditions
GS
, I
D
D
D
GS
D
D
= 40 A,
= 40 A
= 250 µA
GS
= 40 A
= 80 A
=10 V
= 0
Min.
Min.
Min.
68
-
-
-
-
2
0.0082 0.0098
2550
Typ.
Typ.
Typ.
550
175
17
60
90
75
60
75
17
30
3
Max.
Max.
Max.
±100
STP80NF70
10
-
-
-
-
1
4
Unit
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
S
V
V
Ω