STP80NF70 STMicroelectronics, STP80NF70 Datasheet - Page 7

• Manufacturer Part Number: STP80NF70
• Description: MOSFET N-CH 68V 98A TO-220AB
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF70

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 68V
• Current - Continuous Drain (id) @ 25° C: 98A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2550pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10964-5

STP80NF70
Figure 6.
Figure 8.
Figure 10. Normalized gate threshold voltage
V
BR(DSS)
(norm)
(norm)
V
V
GS(th)
(V)
GS
1.0
12
10
0.8
1.1
0.8
0.9
0.6
1.2
0.9
1.0
0.7
2
0
8
4
6
0
Normalized BV
Gate charge vs gate-source voltage Figure 9.
vs temperature
-50
-50
V
20
I
DD
I
D
D
V
=250µA
=80A
=34V
GS
0
0
=0
40
DSS
50
50
60
vs temperature
V
I
D
100
100
DS
=250µA
=V
80
GS
T
T
Doc ID 17610 Rev 1
Q
J
J
(°C)
AM00957v1
AM00952v1
AM00954v1
(°C)
g
(nC)
Figure 7.
Figure 11. Normalized on resistance vs
R
DS(on)
(mΩ)
(norm)
C(pF)
R
9.5
1000
5000
3000
2000
4000
8.5
7.5
DS(on)
1.0
0.2
1.4
7
1.8
0.6
8
9
0
0
0
Static drain-source on resistance
Capacitance variations
temperature
-50
10
20
V
Crss
GS
I
D
=40A
=10V
20
0
T
40
f=1MHz
J
Electrical characteristics
=25°C
30
50
60
40
100
50
80
60
Coss
Ciss
T
J
I
D
(°C)
Q
AM00951v1
AM00953v1
AM00955v1
(A)
g
(nC)
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