FET RF 2N-CH 230MHZ 125V NI780-4

MRFE6VP6300HR5

Manufacturer Part NumberMRFE6VP6300HR5
DescriptionFET RF 2N-CH 230MHZ 125V NI780-4
ManufacturerFreescale Semiconductor
MRFE6VP6300HR5 datasheet
 

Specifications of MRFE6VP6300HR5

Transistor Type2 N-Channel (Dual)Frequency230MHz
Gain26.5dBVoltage - Rated125V
Current - Test100mAVoltage - Test50V
Power - Output300WPackage / CaseNI-780H-4
Drain-source Breakdown Voltage125 VGate-source Breakdown Voltage10 V
Continuous Drain Current100 mAMaximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 CTransistor PolarityN-Channel
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent Rating-
Noise Figure-Other namesMRFE6VP6300HR5TR
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 1.8 and 600 MHz. These devices are suitable for use in high VSWR
industrial, broadcast and aerospace applications.
• Typical Performance: V
= 50 Volts, I
DD
P
out
Signal Type
(W)
Pulsed (100 μsec,
300 Peak
20% Duty Cycle)
CW
300 Avg.
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
at all Phase Angles
• 300 Watts CW Output Power
• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
• Capable of 300 Watts CW Operation
Features
• Device can be used Single--Ended or in a Push--Pull Configuration
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 300 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle,
50 Vdc, I
= 100 mA, 230 MHz
DQ
Case Temperature 87°C, 300 W CW, 50 Vdc, I
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
= 100 mA
DQ
f
G
IRL
η
ps
D
(MHz)
(dB)
(%)
(dB)
230
26.5
74.0
--16
130
25.0
80.0
--15
Operation
DD
Symbol
Value
Unit
V
--0.5, +125
Vdc
DSS
V
--6.0, +10
Vdc
GS
T
--65 to +150
°C
stg
T
150
°C
C
T
225
°C
J
= 1100 mA, 230 MHz
DQ
Document Number: MRFE6VP6300H
Rev. 0, 10/2010
MRFE6VP6300HR3
MRFE6VP6300HSR3
1.8- -600 MHz, 300 W, 50 V
LATERAL N- -CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465M- -01, STYLE 1
NI- -780- -4
MRFE6VP6300HR3
CASE 465H- -02, STYLE 1
NI- -780S- -4
MRFE6VP6300HSR3
RF
/V
3
1
RF
/V
in
GS
out
DS
4
2 RF
/V
RF
/V
out
DS
out
GS
(Top View)
Figure 1. Pin Connections
(2,3)
Symbol
Value
Unit
°C/W
Z
0.05
θJC
R
0.19
θJC
MRFE6VP6300HR3 MRFE6VP6300HSR3
1

MRFE6VP6300HR5 Summary of contents

  • Page 1

    ... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor = 100 mA ...

  • Page 2

    ... Vdc 1.7 2.5 3.2 Vdc — 0.25 — Vdc — 0.8 — pF — 76 — pF — 188 — 300 W Peak (60 W Avg.), f = 230 MHz, out 25.0 26.5 28.0 dB 72.0 74.0 — % — --16 -- Device Data Freescale Semiconductor ...

  • Page 3

    ... V Chip Capacitor C14, C15, C16 220 μF, 100 V Electolytic Capacitors C18, C19 18 pF Chip Capacitors L1 120 nH Inductor L2 17.5 nH Inductor R1 1000 Ω, 1/2 W Chip Resistor PCB 0.030″, ε Device Data Freescale Semiconductor + + L1 C9 C14 C15 DUT C3 Z9 Z10* ...

  • Page 4

    ... Figure 3. MRFE6VP6300HR3(HSR3) Test Circuit Component Layout MRFE6VP6300HR3 MRFE6VP6300HSR3 4 C14 C10 C17 MRFE6VP6300H/HS Rev. 2 C15 C13 C16 C12 C11 C18 C20 C19 RF Device Data Freescale Semiconductor ...

  • Page 5

    ... MHz Pulse Width = 100 μsec, 20% Duty Cycle 100 150 200 250 P , OUTPUT POWER (WATTS) PULSED out Figure 8. Pulsed Drain Efficiency versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — PULSED 60 C iss oss 57 P1dB = 55.4 dBm (344 rss 54 53 ...

  • Page 6

    ... TWO--TONE SPACING (MHz) Figure 11. Intermodulation Distortion Products versus Two- -Tone Spacing = 50 Vdc 230 MHz 230.1 MHz 900 mA 1100 mA 1400 mA 1600 mA 100 P , OUTPUT POWER (WATTS) PEP out Figure 13. Third Order Intermodulation Distortion versus Output Power RF Device Data Freescale Semiconductor 40 400 ...

  • Page 7

    ... Figure 14. MTTF versus Junction Temperature — Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours when the device is operated Vdc 300 W Avg., and η DD out MTTF calculator available at http://www.freescale.com/rf. Select Software & ...

  • Page 8

    ... W Peak DD DQ out source load MHz Ω Ω 230 0.65 + j2.79 1.64 + j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Output Device Matching Under Network Test Z Z source load RF Device Data Freescale Semiconductor ...

  • Page 9

    ... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6VP6300HR3 MRFE6VP6300HSR3 9 ...

  • Page 10

    ... MRFE6VP6300HR3 MRFE6VP6300HSR3 10 RF Device Data Freescale Semiconductor ...

  • Page 11

    ... RF Device Data Freescale Semiconductor MRFE6VP6300HR3 MRFE6VP6300HSR3 11 ...

  • Page 12

    ... MRFE6VP6300HR3 MRFE6VP6300HSR3 12 RF Device Data Freescale Semiconductor ...

  • Page 13

    ... For Software Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 Oct. 2010 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor REVISION HISTORY Description MRFE6VP6300HR3 MRFE6VP6300HSR3 13 ...

  • Page 14

    ... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...