MRFE6VP6300HR5 Freescale Semiconductor, MRFE6VP6300HR5 Datasheet

FET RF 2N-CH 230MHZ 125V NI780-4

MRFE6VP6300HR5

Manufacturer Part Number
MRFE6VP6300HR5
Description
FET RF 2N-CH 230MHZ 125V NI780-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFE6VP6300HR5

Transistor Type
2 N-Channel (Dual)
Frequency
230MHz
Gain
26.5dB
Voltage - Rated
125V
Current - Test
100mA
Voltage - Test
50V
Power - Output
300W
Package / Case
NI-780H-4
Drain-source Breakdown Voltage
125 V
Gate-source Breakdown Voltage
10 V
Continuous Drain Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Other names
MRFE6VP6300HR5TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFE6VP6300HR5
Manufacturer:
FUJI
Quantity:
5 600
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
between 1.8 and 600 MHz. These devices are suitable for use in high VSWR
industrial, broadcast and aerospace applications.
• Typical Performance: V
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
• Capable of 300 Watts CW Operation
Features
• Device can be used Single--Ended or in a Push--Pull Configuration
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
RF Power transistors designed for applications operating at frequencies
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
at all Phase Angles
Operation
13 inch Reel.
13 inch Reel.
• 300 Watts CW Output Power
• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Case Temperature 75°C, 300 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle,
Case Temperature 87°C, 300 W CW, 50 Vdc, I
Pulsed (100 μsec,
MTTF calculators by product.
Select Documentation/Application Notes -- AN1955.
20% Duty Cycle)
50 Vdc, I
Signal Type
CW
DQ
= 100 mA, 230 MHz
Rating
300 Peak
300 Avg.
DD
P
(W)
out
= 50 Volts, I
(1,2)
Characteristic
DD
(MHz)
230
130
Operation
DQ
f
= 100 mA
DQ
Symbol
= 1100 mA, 230 MHz
V
V
T
T
DSS
T
stg
GS
(dB)
26.5
25.0
C
G
J
ps
--65 to +150
--0.5, +125
--6.0, +10
74.0
80.0
(%)
η
Value
D
150
225
(dB)
IRL
--16
--15
Unit
Vdc
Vdc
°C
°C
°C
Document Number: MRFE6VP6300H
MRFE6VP6300HR3 MRFE6VP6300HSR3
CASE 465M- -01, STYLE 1
RF
MRFE6VP6300HSR3
RF
CASE 465H- -02, STYLE 1
Symbol
MRFE6VP6300HR3
out
MRFE6VP6300HR3
in
R
Z
MRFE6VP6300HSR3
/V
/V
θJC
Figure 1. Pin Connections
θJC
1.8- -600 MHz, 300 W, 50 V
GS
GS
LATERAL N- -CHANNEL
RF POWER MOSFETs
NI- -780- -4
NI- -780S- -4
3
4
BROADBAND
(Top View)
Value
0.05
0.19
(2,3)
Rev. 0, 10/2010
1
2 RF
RF
out
out
°C/W
Unit
/V
/V
DS
DS
1

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MRFE6VP6300HR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor = 100 mA ...

Page 2

... Vdc 1.7 2.5 3.2 Vdc — 0.25 — Vdc — 0.8 — pF — 76 — pF — 188 — 300 W Peak (60 W Avg.), f = 230 MHz, out 25.0 26.5 28.0 dB 72.0 74.0 — % — --16 -- Device Data Freescale Semiconductor ...

Page 3

... V Chip Capacitor C14, C15, C16 220 μF, 100 V Electolytic Capacitors C18, C19 18 pF Chip Capacitors L1 120 nH Inductor L2 17.5 nH Inductor R1 1000 Ω, 1/2 W Chip Resistor PCB 0.030″, ε Device Data Freescale Semiconductor + + L1 C9 C14 C15 DUT C3 Z9 Z10* ...

Page 4

... Figure 3. MRFE6VP6300HR3(HSR3) Test Circuit Component Layout MRFE6VP6300HR3 MRFE6VP6300HSR3 4 C14 C10 C17 MRFE6VP6300H/HS Rev. 2 C15 C13 C16 C12 C11 C18 C20 C19 RF Device Data Freescale Semiconductor ...

Page 5

... MHz Pulse Width = 100 μsec, 20% Duty Cycle 100 150 200 250 P , OUTPUT POWER (WATTS) PULSED out Figure 8. Pulsed Drain Efficiency versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — PULSED 60 C iss oss 57 P1dB = 55.4 dBm (344 rss 54 53 ...

Page 6

... TWO--TONE SPACING (MHz) Figure 11. Intermodulation Distortion Products versus Two- -Tone Spacing = 50 Vdc 230 MHz 230.1 MHz 900 mA 1100 mA 1400 mA 1600 mA 100 P , OUTPUT POWER (WATTS) PEP out Figure 13. Third Order Intermodulation Distortion versus Output Power RF Device Data Freescale Semiconductor 40 400 ...

Page 7

... Figure 14. MTTF versus Junction Temperature — Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours when the device is operated Vdc 300 W Avg., and η DD out MTTF calculator available at http://www.freescale.com/rf. Select Software & ...

Page 8

... W Peak DD DQ out source load MHz Ω Ω 230 0.65 + j2.79 1.64 + j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Output Device Matching Under Network Test Z Z source load RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6VP6300HR3 MRFE6VP6300HSR3 9 ...

Page 10

... MRFE6VP6300HR3 MRFE6VP6300HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRFE6VP6300HR3 MRFE6VP6300HSR3 11 ...

Page 12

... MRFE6VP6300HR3 MRFE6VP6300HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... For Software Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 Oct. 2010 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor REVISION HISTORY Description MRFE6VP6300HR3 MRFE6VP6300HSR3 13 ...

Page 14

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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