MRFE6VP6300HR5 Freescale Semiconductor, MRFE6VP6300HR5 Datasheet - Page 13

• Manufacturer Part Number: MRFE6VP6300HR5
• Description: FET RF 2N-CH 230MHZ 125V NI780-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP6300HR5

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 230MHz
• Gain: 26.5dB
• Voltage - Rated: 125V
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: NI-780H-4
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Other names: MRFE6VP6300HR5TR

RF Device Data
Freescale Semiconductor
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
Oct. 2010
Date
• Initial Release of Data Sheet
PRODUCT DOCUMENTATION AND SOFTWARE
REVISION HISTORY
Description
MRFE6VP6300HR3 MRFE6VP6300HSR3
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