MRFE6VP6300HR5 Freescale Semiconductor, MRFE6VP6300HR5 Datasheet - Page 2

• Manufacturer Part Number: MRFE6VP6300HR5
• Description: FET RF 2N-CH 230MHZ 125V NI780-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP6300HR5

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 230MHz
• Gain: 26.5dB
• Voltage - Rated: 125V
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: NI-780H-4
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Other names: MRFE6VP6300HR5TR

2
MRFE6VP6300HR3 MRFE6VP6300HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
1. Each side of device measured separately.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 5 Vdc, V
= 0 Vdc, I
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
D
DS
D
D
D
(1)
= 50 mA)
GS
GS
= 480 μAdc)
= 100 mAdc, Measured in Functional Test)
= 1 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
(1)
(1)
(1)
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
Symbol
V
V
V
V
I
I
I
C
DS(on)
C
(BR)DSS
GS(th)
GS(Q)
C
G
= 100 mA, P
IRL
GSS
DSS
DSS
η
oss
rss
iss
ps
D
out
25.0
72.0
Min
125
1.5
1.7
—
—
—
—
—
—
—
—
= 300 W Peak (60 W Avg.), f = 230 MHz,
0.25
26.5
74.0
Typ
188
--16
2.2
2.5
0.8
76
—
—
—
—
IV (Minimum)
B (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
Max
28.0
3.0
3.2
10
—
—
—
—
—
—
--9
1
5
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
pF
pF
%