MRFE6VP6300HR5 Freescale Semiconductor, MRFE6VP6300HR5 Datasheet - Page 7

FET RF 2N-CH 230MHZ 125V NI780-4

MRFE6VP6300HR5

Manufacturer Part Number
MRFE6VP6300HR5
Description
FET RF 2N-CH 230MHZ 125V NI780-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFE6VP6300HR5

Transistor Type
2 N-Channel (Dual)
Frequency
230MHz
Gain
26.5dB
Voltage - Rated
125V
Current - Test
100mA
Voltage - Test
50V
Power - Output
300W
Package / Case
NI-780H-4
Drain-source Breakdown Voltage
125 V
Gate-source Breakdown Voltage
10 V
Continuous Drain Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Other names
MRFE6VP6300HR5TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFE6VP6300HR5
Manufacturer:
FUJI
Quantity:
5 600
RF Device Data
Freescale Semiconductor
10
10
10
10
10
10
Figure 14. MTTF versus Junction Temperature — CW
9
8
7
6
5
4
90
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
110
TYPICAL CHARACTERISTICS
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
150
out
170
= 300 W Avg., and η
190
210
D
= 80%.
230
MRFE6VP6300HR3 MRFE6VP6300HSR3
250
7

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