MRFE6VP6300HR5 Freescale Semiconductor, MRFE6VP6300HR5 Datasheet - Page 8

• Manufacturer Part Number: MRFE6VP6300HR5
• Description: FET RF 2N-CH 230MHZ 125V NI780-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP6300HR5

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 230MHz
• Gain: 26.5dB
• Voltage - Rated: 125V
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: NI-780H-4
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Other names: MRFE6VP6300HR5TR

8
MRFE6VP6300HR3 MRFE6VP6300HSR3
Z
o
= 5 Ω
Figure 15. Series Equivalent Source and Load Impedance
Input
Matching
Network
Z
Z
source
load
MHz
230
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= 50 Vdc, I
Z
Z
gate to ground.
drain to ground.
source
source
f = 230 MHz
0.65 + j2.79
Z
DQ
Device
Under
Test
source
Z
Ω
= 100 mA, P
load
f = 230 MHz
Z
out
load
= 300 W Peak
1.64 + j2.85
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data