BF904,235 NXP Semiconductors, BF904,235 Datasheet
BF904,235
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BF904,235 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors N-channel dual gate MOS-FETs FEATURES Specially designed for use supply voltage Short channel transistor with high transfer admittance to input capacitance ratio Low noise gain controlled amplifier GHz Superior cross-modulation performance during AGC. APPLICATIONS VHF and UHF applications with supply voltage such as television tuners and professional communications equipment ...
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... NXP Semiconductors N-channel dual gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power dissipation tot BF904 BF904R T storage temperature stg T operating junction temperature ...
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... NXP Semiconductors N-channel dual gate MOS-FETs THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a BF904 BF904R R thermal resistance from junction to soldering point th j-s BF904 BF904R Notes 1. Device mounted on a printed-circuit board the temperature at the soldering point of the source lead. s STATIC CHARACTERISTICS unless otherwise specifi ...
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... NXP Semiconductors N-channel dual gate MOS-FETs (mS Fig.4 Transfer admittance as a function of the junction temperature; typical values. 120 handbook, halfpage V unw (dB V) 110 100 MHz MHz 120 k unw amb G1 Fig.6 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.20. ...
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... NXP Semiconductors N-channel dual gate MOS-FETs 20 handbook, halfpage (mA) 16 1 1 Fig.8 Output characteristics; typical values. 40 handbook, halfpage y fs (mS Fig.10 Forward transfer admittance as a function of drain current; typical values. MLD269 handbook, halfpage ( MLD272 handbook, halfpage 3 2 (mA Fig.11 Drain current as a function of gate 1 current; ...
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... NXP Semiconductors N-channel dual gate MOS-FETs 12 handbook, halfpage I D (mA G2 120 k (connected Fig.12 Drain current as a function of gate 1 supply voltage (= V see Fig.20. 12 handbook, halfpage I D (mA 120 k (connected Fig.14 Drain current as a function of gate 2 voltage; typical values; see Fig.20. MLD275 handbook, halfpage ...
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... NXP Semiconductors N-channel dual gate MOS-FETs 2 10 handbook, halfpage y is (mS mA amb Fig.16 Input admittance as a function of frequency; typical values (mS mA amb Fig.18 Forward transfer admittance and phase as a function of frequency; typical values. MLD277 (MHz mA Fig.17 Reverse transfer admittance and phase as ...
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... NXP Semiconductors N-channel dual gate MOS-FETs R GEN AGC 4 DUT 4 Fig.20 Cross-modulation test set-up. Rev November 2007 Product specification BF904; BF904R 450 nH C4 4.7 nF MLD171 ...
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... NXP Semiconductors N-channel dual gate MOS-FETs Table 1 Scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 40 0.989 3.4 100 0.985 8.3 200 0.976 16.4 300 0.958 24.1 400 0.942 32.0 500 0.918 39.3 600 0.899 46.0 700 0.876 52.6 800 0.852 58.8 900 ...
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... NXP Semiconductors N-channel dual gate MOS-FETs PACKAGE OUTLINES Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...
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... NXP Semiconductors N-channel dual gate MOS-FETs Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors Revision history Revision history Document ID Release date BF904_904R_N_6 20071113 • Modifications: Fig. 1 and 2 on page 2; Figure note changed BF904_904R_5 19990517 (9397 750 05898) BF904R_4 19970905 (9397 750 02668) BF904R_3 19950425 BF904R_2 - BF904R_1 - Data sheet status Change notice Product data sheet - Product specifi ...