BLF6G27LS-100,118 NXP Semiconductors, BLF6G27LS-100,118 Datasheet

TRANS PWR LDMOS SOT502

BLF6G27LS-100,118

Manufacturer Part Number
BLF6G27LS-100,118
Description
TRANS PWR LDMOS SOT502
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G27LS-100,118

Package / Case
SOT502A
Transistor Type
LDMOS
Frequency
2.5GHz ~ 2.7GHz
Gain
17dB
Voltage - Rated
65V
Current Rating
29A
Current - Test
900mA
Voltage - Test
28V
Power - Output
14W
Resistance Drain-source Rds (on)
0.16 Ohms
Configuration
Single
Drain-source Breakdown Voltage
65 V
Continuous Drain Current
29 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
1. Product profile
Table 1.
Typical RF performance at T
[1]
[2]
[3]
Mode of operation
BLF6G27-100
1-carrier W-CDMA
1-carrier N-CDMA
BLF6G27LS-100
1-carrier W-CDMA
1-carrier N-CDMA
Signal is a one carrier, TM1 W-CDMA signal with 64 DPCH and 100 % clipping. PAR is 9.65 dB at 0.01 % probability on CCDF.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz.
Measured within 30 kHz bandwidth.
Typical performance
1.1 General description
1.2 Features and benefits
[2]
[2]
[1]
[1]
100 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
f
(MHz)
2500 to 2700
2500 to 2700
2500 to 2700
2500 to 2700
case
BLF6G27-100; BLF6G27LS-100
WiMAX power LDMOS transistor
Rev. 02 — 8 July 2010
Typical 1-carrier W-CDMA performance (single carrier W-CDMA TM1 with 64 DPCH
and 100 % clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; channel
bandwidth is 3.84 MHz) at a frequency of 2500 MHz, 2600 MHz and 2700 MHz, a
supply voltage of 28 V and an I
Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz, 2600 MHz
and 2700 MHz, a supply voltage of 28 V and an I
= 25
Average output power = 14 W
Power gain = 17 dB
Drain efficiency = 23 %
ACPR
Average output power = 14 W
Power gain = 17 dB
Drain efficiency = 23 %
ACPR
°
C in a class-AB production test circuit.
5M
885k
= −41 dBc
V
(V)
28
28
28
28
= −50 dBc (within 30 kHz bandwidth)
DS
P
(W)
14
14
14
14
L(AV)
G
(dB)
16.5
17
17
17
p
Dq
η
(%) (dBc)
23
23
23
23
of 900 mA:
D
ACPR
-
−50
-
−50
[3]
[3]
885k
Dq
ACPR
(dBc)
-
−65
-
−65
of 900 mA:
[3]
[3]
1980k
Product data sheet
ACPR
(dBc)
−40
-
−41
-
5M
ACPR
(dBc)
−59
-
−60
-
10M

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BLF6G27LS-100,118 Summary of contents

Page 1

... BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 — 8 July 2010 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance case Mode of operation f (MHz) BLF6G27-100 [1] 1-carrier W-CDMA ...

Page 2

... BLF6G27LS-100 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G27-100 BLF6G27LS-100 - BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads All information provided in this document is subject to legal disclaimers. Rev. 02 — ...

Page 3

... V GS(th) I DSS I DSX I GSS DS(on BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 Limiting values Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics Conditions thermal resistance from T case junction to case Characteristics C unless otherwise specified. drain-source breakdown voltage ...

Page 4

... ACPR 5M ACPR 10M ACPR measured in 3.84 MHz channel bandwidth at ±5 MHz and ±10 MHz. [1] 7.1 Ruggedness in class-AB operation The BLF6G27-100 and BLF6G27LS-100 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 ...

Page 5

... DPCH and 100 % clipping; PAR = 9. 0.01 % probability; channel bandwidth = 3.84 MHz. ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 1. Power gain and drain efficiency as a function of average output power; typical values BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 001aal779 50 η ACPR D (%) (dBc) (2) (3) ...

Page 6

... W-CDMA TM1 DS Dq with 64 DPCH and 100 % clipping; PAR = 9. 0.01 % probability; channel bandwidth = 3.84 MHz. Fig 3. Power gain and drain efficiency as a function of frequency; typical values BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 001aal781 −35 30 η D (%) ACPR (dBc) 28 −45 ...

Page 7

... PAR = 9 0.01 % probability on the CCDF; channel bandwidth = 1.2288 MHz. ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 5. Power gain and drain efficiency as a function of average output power; typical values BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 001aal783 50 η ACPR D (%) (dBc) (1) (2) 40 ...

Page 8

... IS-95 with pilot, paging, sync DS Dq and 6 traffic channels (Walsh codes 8 to 13); PAR = 9 0.01 % probability on the CCDF; channel bandwidth = 1.2288 MHz. Fig 7. Power gain and drain efficiency as a function of frequency; typical values BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 001aal785 −40 30 η D (%) ACPR (dBc) 28 −50 ...

Page 9

... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 9. Package outline SOT502A BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 10

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 10. Package outline SOT502B BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 11

... N-CDMA PAR PUSC RF TM1 VSWR W-CDMA WCS WiMAX 10. Revision history Table 9. Revision history Document ID BLF6G27-100_BLF6G27LS-100 v.2 20100708 Modifications: BLF6G27-100_BLF6G27LS-100_1 BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge Frame Control Header ...

Page 12

... BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 13

... For sales office addresses, please send an email to: BLF6G27-100_BLF6G27LS-100 Product data sheet BLF6G27-100; BLF6G27LS-100 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com WiMAX power LDMOS transistor All rights reserved. Date of release: 8 July 2010 Document identifier: BLF6G27-100_BLF6G27LS-100 ...

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