MRF6V3090NBR1 Freescale Semiconductor, MRF6V3090NBR1 Datasheet

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MRF6V3090NBR1

Manufacturer Part Number
MRF6V3090NBR1
Description
FET RF N-CH 860MHZ 50V TO272-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V3090NBR1

Transistor Type
N-Channel
Frequency
860MHz
Gain
22dB
Voltage - Rated
110V
Current - Test
350mA
Voltage - Test
50V
Power - Output
18W
Package / Case
TO-272BB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
• Typical DVB--T OFDM Performance: V
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Excellent Thermal Stability
• Greater Negative Gate--Source Voltage Range for Improved Class C
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
PAR = 9.5 dB @ 0.01% Probability on CCDF.
90 Watts CW Output Power
Operation
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Case Temperature 76°C, 18 W CW,
50 Vdc, I
Case Temperature 80°C, 90 W CW,
50 Vdc, I
out
Power Gain — 22.0 dB
Drain Efficiency — 28.5%
ACPR @ 4 MHz Offset — --62.0 dBc @ 4 kHz Bandwidth
calculators by product.
Select Documentation/Application Notes -- AN1955.
= 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal
DQ
DQ
= 350 mA
= 350 mA
Characteristic
Rating
Test Methodology
(1,2)
DD
Operation
DD
= 50 Volts, I
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
GS
stg
C
J
DQ
-- 65 to +150
= 350 mA,
--0.5, +110
Value
--6.0, +10
Value
0.79
0.82
150
225
(2,3)
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
CASE 1486- -03, STYLE 1
Note: Exposed backside of the package is
RF
RF
Document Number: MRF6V3090N
MRF6V3090NR1(NR5)
in
in
MRF6V3090NBR1
MRF6V3090NBR5
/V
/V
MRF6V3090NR1
MRF6V3090NR5
Figure 1. Pin Connections
TO- -270 WB- -4
GS
GS
PARTS ARE SINGLE- -ENDED
470- -860 MHz, 90 W, 50 V
the source terminal for the transistor.
LATERAL N- -CHANNEL
PLASTIC
RF POWER MOSFETs
IV (Minimum)
B (Minimum)
2 (Minimum)
SINGLE- -ENDED
BROADBAND
Class
MRF6V3090NBR1(NBR5)
CASE 1484- -04, STYLE 1
(Top View)
TO- -272 WB- -4
PLASTIC
Rev. 0, 4/2010
RF
RF
out
out
/V
/V
DS
DS
1

Related parts for MRF6V3090NBR1

MRF6V3090NBR1 Summary of contents

Page 1

... C T 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.79 0.82 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Document Number: MRF6V3090N Rev. 0, 4/2010 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 470- -860 MHz LATERAL N- -CHANNEL SINGLE- -ENDED BROADBAND RF POWER MOSFETs CASE 1486- -03, STYLE 1 TO- -270 WB- -4 PLASTIC ...

Page 2

... Functional Tests (In Freescale Test Fixture, 50 ohm system) V Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 2 Rating 3 = 25°C unless otherwise noted) A Symbol ...

Page 3

... Z12 Z13 Z14 Z15 Z16 Z17 Z18 Description T491X226K035AT GRM55DR61H106KA88L ATC100B430JT500XT ATC100B6R2BT500XT ATC100B2R2JT500XT ATC100B9R1CT500XT EEVFK2A221M ATC100B7R5CT500XT ATC100B3R0CT500XT ATC100B0R7BT500XT CRCW120610KOJNEA CRCW120610ROJNEA RF--35 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 V SUPPLY + C8 C9 C10 OUTPUT Z13 Z14 Z15 Z16 Z17 Z18 C14 C15 C11 C12 C13 + C16 ...

Page 4

... MRF6V3090N Rev. 0 Figure 3. MRF6V3090NR1(NBR1) Test Circuit Component Layout MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 C16 -- C10 C9 C11 C14 C15 C12 C13 C17 C18 -- RF Device Data Freescale Semiconductor ...

Page 5

... Vdc 350 mA 860 MHz --30_C C 85_C 25_C η OUTPUT POWER (WATTS) out Figure 8. CW Power Gain and Drain Efficiency versus Output Power MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 = 350 mA 860 MHz 100 P , OUTPUT POWER (WATTS) out versus Output Power = 50 Vdc 350 mA 860 MHz ...

Page 6

... Vdc 854 MHz 860 MHz DD Two--Tone Measurements, 6 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 11. Two- -Tone Power Gain versus Output Power MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 6 -- Vdc --25 Two--Tone Measurements --30 --35 --40 --45 --50 --55 7th Order --60 --65 1 Figure 10 ...

Page 7

... P , OUTPUT POWER (WATTS) AVG. out Figure 17. Single- -Carrier DVB- -T OFDM ACPR Power Gain and Drain Efficiency versus Output Power MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 7.61 MHz 4 kHz BW 4 kHz BW ACPR Measured at 4 MHz Offset from Center Frequency 8K Mode DVB--T OFDM 64 QAM Data Carrier Modulation, 5 Symbols ...

Page 8

... Figure 18. MTTF versus Junction Temperature - - CW MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours when the device is operated Vdc Avg., and η DD out MTTF calculator available at http://www.freescale.com/rf. Select Software & ...

Page 9

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Ω load Z load Ω Output Matching Network 9 ...

Page 10

... MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 11 ...

Page 12

... MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 13 ...

Page 14

... MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 15 ...

Page 16

... Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 Apr. 2010 • Initial Release of Data Sheet MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 16 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 17

... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 17 ...

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