MRFE6VP61K25HSR6 Freescale Semiconductor, MRFE6VP61K25HSR6 Datasheet

MOSFET RF N-CH 1.25KW NI-1230S

MRFE6VP61K25HSR6

Manufacturer Part Number
MRFE6VP61K25HSR6
Description
MOSFET RF N-CH 1.25KW NI-1230S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFE6VP61K25HSR6

Transistor Type
2 N-Channel (Dual)
Frequency
230MHz
Gain
24dB
Voltage - Rated
125V
Current - Test
100mA
Voltage - Test
50V
Power - Output
1250W
Package / Case
NI-1230S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
• Typical Performance: V
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
• Capable of 1250 Watts CW Operation
Features
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 V
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate--Source Voltage
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ T
Operating Junction Temperature
Thermal Resistance, Junction to Case
These high ruggedness devices are designed for use in high VSWR industrial
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,
1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Range for Improved Class C Operation
For R5 Tape and Reel options, see p. 12.
Derate above 25°C
Case Temperature 66°C, 1250 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 63°C, 1250 W CW, 100 mA, 230 MHz
Pulsed (100 μsec,
calculators by product.
Select Documentation/Application Notes -- AN1955.
20% Duty Cycle)
Signal Type
CW
Rating
1250 Peak
1250 CW
DD
C
P
(W)
out
= 25°C
= 50 Volts, I
(1,2)
DD
(MHz)
230
230
Operation
DQ
f
Characteristic
= 100 mA
Symbol
V
V
T
T
P
DSS
T
stg
GS
(dB)
24.0
22.9
C
G
D
J
ps
-- 65 to +150
--0.5, +125
--6.0, +10
74.0
74.6
(%)
η
Value
1333
6.67
D
150
225
(dB)
IRL
--14
--15
W/°C
Unit
Vdc
Vdc
°C
°C
°C
W
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
Document Number: MRFE6VP61K25H
MRFE6VP61K25HSR6
CASE 375E- -04, STYLE 1
CASE 375D- -05, STYLE 1
MRFE6VP61K25HR6
RF
RF
MRFE6VP61K25HSR6
MRFE6VP61K25HR6
1.8- -600 MHz, 1250 W CW, 50 V
in
in
/V
/V
Figure 1. Pin Connections
GS
GS
LATERAL N- -CHANNEL
PARTS ARE PUSH- -PULL
RF POWER MOSFETs
NI- -1230S
NI- -1230
3
4
BROADBAND
Symbol
(Top View)
R
Z
θJC
θJC
Value
Rev. 1, 1/2011
0.03
0.15
1
2 RF
(2,3)
RF
out
out
/V
/V
°C/W
Unit
DS
DS
1

Related parts for MRFE6VP61K25HSR6

MRFE6VP61K25HSR6 Summary of contents

Page 1

... MHz, 1250 W CW LATERAL N- -CHANNEL BROADBAND RF POWER MOSFETs CASE 375D- -05, STYLE 1 NI- -1230 MRFE6VP61K25HR6 CASE 375E- -04, STYLE 1 NI- -1230S MRFE6VP61K25HSR6 PARTS ARE PUSH- -PULL out out in GS (Top View) Figure 1. Pin Connections (2,3) Symbol Value Z 0.03 θJC R 0.15 θJC MRFE6VP61K25HR6 MRFE6VP61K25HSR6 / Unit °C/W 1 ...

Page 2

... Input Return Loss Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) V (250 W Avg.), f = 230 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Load Mismatch (VSWR 65:1 at all Phase Angles) 1. Each side of device measured separately. MRFE6VP61K25HR6 MRFE6VP61K25HSR6 2 = 25°C unless otherwise noted) A Symbol I ...

Page 3

... C28 Z23, Z24 1.251″ x 0.300″ Microstrip Z25, Z26 0.127″ x 0.300″ Microstrip Z27, Z28 0.116″ x 0.300″ Microstrip Z29 0.186″ x 0.082″ Microstrip Z30 0.179″ x 0.082″ Microstrip * Line length includes microstrip bends MRFE6VP61K25HR6 MRFE6VP61K25HSR6 RF 3 ...

Page 4

... C22, C23, C24, C26, C27, C28 470 μ Electrolytic Capacitors Coax1 Ω Semi Rigid Coax, 2.2″ Long L1 Inductors L3, L4 6.6 nH Inductors R1 Ω Chip Resistors PCB 0.030″, ε MRFE6VP61K25HR6 MRFE6VP61K25HSR6 4 L1 C14 C5 L2 MRFE6VP61K25H Rev. 3 Description ATC100B200JT500XT ATC100B270JT500XT 27291SL T491X226K035AT ...

Page 5

... P , OUTPUT POWER (WATTS) PULSED out Figure 7. Pulsed Power Gain versus Output Power --30_C = 100 mA 230 MHz DQ 25_C 85_C = --30_C C 85_C 1000 P , OUTPUT POWER (WATTS) PULSED out versus Output Power MRFE6VP61K25HR6 MRFE6VP61K25HSR6 Ideal Actual 1400 1600 2000 2000 5 ...

Page 6

... This above graph displays calculated MTTF in hours when the device is operated at V MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature — CW MRFE6VP61K25HR6 MRFE6VP61K25HSR6 6 TYPICAL CHARACTERISTICS 110 130 150 170 190 ...

Page 7

... Z Z source MHz Ω 230 1.29 + j3.54 2.12 + j2. Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured from load drain to drain, balanced configuration. Device + Under -- Test -- + Z Z source load load Ω Output Matching Network MRFE6VP61K25HR6 MRFE6VP61K25HSR6 7 ...

Page 8

... MRFE6VP61K25HR6 MRFE6VP61K25HSR6 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor MRFE6VP61K25HR6 MRFE6VP61K25HSR6 9 ...

Page 10

... MRFE6VP61K25HR6 MRFE6VP61K25HSR6 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRFE6VP61K25HR6 MRFE6VP61K25HSR6 11 ...

Page 12

... MRFE6VP61K25H and MRFE6VP61K25HS in the R6 tape and reel option. The following table summarizes revisions to this document. Revision Date 0 Nov. 2010 • Initial Release of Data Sheet 1 Jan. 2011 • Fig. 1, Pin Connections, corrected pin 4 label from RF MRFE6VP61K25HR6 MRFE6VP61K25HSR6 12 R5 TAPE AND REEL OPTION REVISION HISTORY Description /V out ...

Page 13

... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010--2011. All rights reserved. MRFE6VP61K25HR6 MRFE6VP61K25HSR6 13 ...

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