MRFE6VP61K25HSR5 Freescale Semiconductor, MRFE6VP61K25HSR5 Datasheet

MOSFET RF N-CH 1.25KW NI-1230S

MRFE6VP61K25HSR5

Manufacturer Part Number
MRFE6VP61K25HSR5
Description
MOSFET RF N-CH 1.25KW NI-1230S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFE6VP61K25HSR5

Transistor Type
2 N-Channel (Dual)
Frequency
230MHz
Gain
24dB
Voltage - Rated
125V
Current - Test
100mA
Voltage - Test
50V
Power - Output
1250W
Package / Case
NI-1230S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
• Typical Performance: V
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
• Capable of 1250 Watts CW Operation
Features
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 V
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate--Source Voltage
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ T
Operating Junction Temperature
Thermal Resistance, Junction to Case
These high ruggedness devices are designed for use in high VSWR industrial
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,
1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Range for Improved Class C Operation
For R5 Tape and Reel options, see p. 12.
Derate above 25°C
Case Temperature 66°C, 1250 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 63°C, 1250 W CW, 100 mA, 230 MHz
Pulsed (100 μsec,
calculators by product.
Select Documentation/Application Notes -- AN1955.
20% Duty Cycle)
Signal Type
CW
Rating
1250 Peak
1250 CW
DD
C
P
(W)
out
= 25°C
= 50 Volts, I
(1,2)
DD
(MHz)
230
230
Operation
DQ
f
Characteristic
= 100 mA
Symbol
V
V
T
T
P
DSS
T
stg
GS
(dB)
24.0
22.9
C
G
D
J
ps
-- 65 to +150
--0.5, +125
--6.0, +10
74.0
74.6
(%)
η
Value
1333
6.67
D
150
225
(dB)
IRL
--14
--15
W/°C
Unit
Vdc
Vdc
°C
°C
°C
W
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
Document Number: MRFE6VP61K25H
MRFE6VP61K25HSR6
CASE 375E- -04, STYLE 1
CASE 375D- -05, STYLE 1
MRFE6VP61K25HR6
RF
RF
MRFE6VP61K25HSR6
MRFE6VP61K25HR6
1.8- -600 MHz, 1250 W CW, 50 V
in
in
/V
/V
Figure 1. Pin Connections
GS
GS
LATERAL N- -CHANNEL
PARTS ARE PUSH- -PULL
RF POWER MOSFETs
NI- -1230S
NI- -1230
3
4
BROADBAND
Symbol
(Top View)
R
Z
θJC
θJC
Value
Rev. 1, 1/2011
0.03
0.15
1
2 RF
(2,3)
RF
out
out
/V
/V
°C/W
Unit
DS
DS
1

Related parts for MRFE6VP61K25HSR5

MRFE6VP61K25HSR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010--2011. All rights reserved. RF Device Data Freescale Semiconductor = 100 mA ...

Page 2

... Vdc — 0.15 — Vdc — 2.8 — pF — 185 — pF — 562 — 1250 W Peak (250 W Avg.), f = 230 MHz, out 23.0 24.0 26.0 dB 72.5 74.0 — % — --14 -- 100 mA 1250 W Peak DQ out No Degradation in Output Power RF Device Data Freescale Semiconductor ...

Page 3

... Z3, Z4 0.170″ x 0.100″ Microstrip Z5, Z6 0.116″ x 0.285″ Microstrip Z7, Z8 0.116″ x 0.285″ Microstrip Z9, Z10 0.108″ x 0.285″ Microstrip Figure 2. MRFE6VP61K25HR6(HSR6) Test Circuit Schematic — Pulsed RF Device Data Freescale Semiconductor + C10 C11 C12 C13 R1 Z11 Z7 Z9 ...

Page 4

... C22 C23 C24 C21 COAX3 L3 C16 C17 C15 C18 C20 C19 L4 COAX4 C25 -- -- C26 C27 C28 Part Number Manufacturer ATC ATC Johanson Kemet AVX Kemet ATC ATC CDE ATC ATC Multicomp Micro--Coax Coilcraft Coilcraft Vishay Arlon RF Device Data Freescale Semiconductor ...

Page 5

... MHz Pulse Width = 100 μsec, 20% Duty Cycle 20 0 200 400 600 800 1000 P , OUTPUT POWER (WATTS) PULSED out Figure 8. Pulsed Drain Efficiency versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 66 C iss oss 63 P1dB = 61.3 dBm (1333 rss 60 59 ...

Page 6

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature — CW MRFE6VP61K25HR6 MRFE6VP61K25HSR6 6 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Vdc 1250 W CW, and η = 74.6%. DD out D 250 RF Device Data Freescale Semiconductor ...

Page 7

... Input Matching Network Figure 11. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 230 MHz Ω 230 MHz load Vdc 100 mA 1250 W Peak DD DQ out source MHz Ω 230 1.29 + j3.54 2.12 + j2. Test circuit impedance as measured from source gate to gate, balanced configuration. ...

Page 8

... MRFE6VP61K25HR6 MRFE6VP61K25HSR6 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor MRFE6VP61K25HR6 MRFE6VP61K25HSR6 9 ...

Page 10

... MRFE6VP61K25HR6 MRFE6VP61K25HSR6 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRFE6VP61K25HR6 MRFE6VP61K25HSR6 11 ...

Page 12

... The R5 tape and reel option for MRFE6VP61K25H and MRFE6VP61K25HS parts will be available for 2 years after release of MRFE6VP61K25H and MRFE6VP61K25HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRFE6VP61K25H and MRFE6VP61K25HS in the R6 tape and reel option ...

Page 13

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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