PBSS4350D,125 NXP Semiconductors, PBSS4350D,125 Datasheet

TRANS NPN 50V 3A SOT457

PBSS4350D,125

Manufacturer Part Number
PBSS4350D,125
Description
TRANS NPN 50V 3A SOT457
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS4350D,125

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
290mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 2V
Power - Max
750mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Product data sheet
Supersedes data of 2001 Jan 26
DATA SHEET
fpage
PBSS4350D
50 V low V
DISCRETE SEMICONDUCTORS
M3D302
CEsat
NPN transistor
2001 Jul 13

Related parts for PBSS4350D,125

PBSS4350D,125 Summary of contents

Page 1

DATA SHEET fpage PBSS4350D 50 V low V Product data sheet Supersedes data of 2001 Jan 26 DISCRETE SEMICONDUCTORS M3D302 NPN transistor CEsat 2001 Jul 13 ...

Page 2

... NXP Semiconductors 50 V low V NPN transistor CEsat FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • ...

Page 3

... NXP Semiconductors 50 V low V NPN transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors 50 V low V NPN transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector -emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage BEsat V base-emitter turn-on voltage ...

Page 5

... NXP Semiconductors 50 V low V NPN transistor CEsat 600 handbook, halfpage h FE 500 (1) 400 (2) 300 200 (3) 100 0 − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain; typical values handbook, halfpage V CEsat (mV − 20 150 °C. (1) T amb = 25 ° ...

Page 6

... NXP Semiconductors 50 V low V NPN transistor CEsat 1200 handbook, halfpage I C (mA) 1000 800 600 400 200 0 0 0 2.64 nA. ( 3. 2.31 nA. ( 3. 1.98 nA. ( 3. 1.65 nA. ( 2.97 mA Fig.6 Collector current as a function of collector-emitter voltage; typical values handbook, halfpage R CEsat (Ω −1 10 −2 10 − ...

Page 7

... NXP Semiconductors 50 V low V NPN transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 0.40 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 2001 Jul scale 3.1 1.7 3.0 ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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