CAT5114VI-50-GT3 ON Semiconductor, CAT5114VI-50-GT3 Datasheet - Page 5

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CAT5114VI-50-GT3

Manufacturer Part Number
CAT5114VI-50-GT3
Description
IC POT DPP NV 32TAP U/D 8SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of CAT5114VI-50-GT3

Taps
32
Resistance (ohms)
50K
Number Of Circuits
1
Temperature Coefficient
300 ppm/°C Typical
Memory Type
Non-Volatile
Interface
Up/Down
Voltage - Supply
2.5 V ~ 6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CAT5114VI-50-GT3
Manufacturer:
ON Semiconductor
Quantity:
2 050
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
5. I
6. These parameters are periodically sampled and are not 100% tested.
Table 5. DC ELECTRICAL CHARACTERISTICS
POWER SUPPLY
LOGIC INPUTS
POTENTIOMETER CHARACTERISTICS
I
SB1
C
W
Symbol
TC
TC
H
= source or sink.
R
I
I
V
V
V
DNL
/C
(Note 4)
V
CC1
CC2
V
R
INL
I
I
V
I
RATIO
CC
IH
IH2
POT
RPOT
IL
IL2
fc
RH
W
RL
WI
N
L
/C
W
Operating Voltage Range
Supply Current (Increment)
Supply Current (Write)
Supply Current (Standby)
Input Leakage Current
Input Leakage Current
CMOS High Level Input Voltage
CMOS Low Level Input Voltage
Potentiometer Resistance
Pot. Resistance Tolerance
Voltage on R
Voltage on R
Resolution
Integral Linearity Error
Differential Linearity Error
Wiper Resistance
Wiper Current
TC of Pot Resistance
Ratiometric TC
Noise
Potentiometer Capacitances
Frequency Response
Parameter
H
L
pin
pin
V
V
Programming, V
V
CS = V
U/D, INC = V
V
V
2.5 V ≤ V
−10 Device
−50 Device
−00 Device
I
I
V
V
100 kHz / 1 kHz
Passive Attenuator, 10 kW
W
W
(V
CC
CC
CC
IN
IN
CC
CC
http://onsemi.com
≤ 2 mA
≤ 2 mA
CC
= V
= 0 V
= 6 V, f = 1 MHz, I
= 6 V, f = 250 kHz, I
= 3 V
= 5 V, I
= 2.5 V, I
= +2.5 V to +6 V unless otherwise specified)
CC
CC
CC
Conditions
− 0.3 V
W
≤ 6 V
5
CC
W
= 1 mA
= 1 mA
CC
− 0.3 V or GND
= 6 V
W
W
= 0
= 0
V
CC
−0.3
Min
−4.4
2.5
0
0
x 0.7
CC
+ 1 V.
8/8/25
Typ
0.25
8/24
100
150
300
3.2
0.5
1.7
10
50
70
V
V
CC
CC
1000
Max
100
500
−10
V
V
6.0
±20
200
400
50
10
0.5
4.4
20
1
1
+ 0.3
CC
CC
x 0.2
ppm/°C
ppm/°C
nV/√Hz
Units
MHz
LSB
LSB
mA
mA
mA
mA
mA
mA
mA
mA
kW
pF
V
V
V
%
%
W
W
V
V

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