QSC112 Fairchild Semiconductor, QSC112 Datasheet
QSC112
Specifications of QSC112
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QSC112 Summary of contents
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... Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.10 (.25) on all non-nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 Description The QSC112/113/114 is a silicon phototransistor encap- sulated in an infrared transparent, black T-1 package. 0.193 (4.90) 0.030 (0.76) NOM EMITTER ...
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... Peak Sensitivity Wavelength PS Θ Reception Angle I Collector-Emitter Dark Current CEO BV Collector-Emitter Breakdown CEO BV Emitter-Collector Breakdown ECO I On-State Collector Current QSC112 Ee = 0.5 mW/cm C(ON) On-State Collector Current QSC113 On-State Collector Current QSC114 V Saturation Voltage CE(sat) t Rise Time r t Fall Time f Note: 5. λ = 880 nm, AlGaAs. ...
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... E - Radiant Intensity (mW/cm e Figure 3. Dark Current vs. Collector - Emitter Voltage Collector-Emitter Voltage (V) CE ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 130° 140° 150° 160° 170° 180° 1 Figure 5. Dark Current vs. Ambient Temperature ...
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... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 i-Lo™ Power-SPM™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ IntelliMAX™ ® QFET ISOPLANAR™ ...