BPW17N Vishay, BPW17N Datasheet

Photodetector Transistors NPN Phototransistor 32V 100mW 825nm

BPW17N

Manufacturer Part Number
BPW17N
Description
Photodetector Transistors NPN Phototransistor 32V 100mW 825nm
Manufacturer
Vishay
Type
Chipr
Series
-r
Datasheets

Specifications of BPW17N

Maximum Power Dissipation
100 mW
Maximum Dark Current
200 nA
Maximum Operating Temperature
+ 100 C
Package / Case
T-3/4
Transistor Polarity
NPN
Wavelength Typ
825nm
Power Consumption
100mW
Viewing Angle
12°
No. Of Pins
2
Light Current
1.0mA
Dark Current
200nA
C-e Breakdown Voltage
32V
Current Rating
50mA
Transistor Case Style
T-3/4
Current Ic Typ
1mA
External Length / Height
2.9mm
Fall Time Tf
3.7µs
Rohs Compliant
Yes
Svhc
No SVHC (20-Jun-2011)
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Water Clear
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
32V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
200nA
Power Dissipation
100mW
Peak Wavelength
825nm
Half-intensity Angle
24deg
Mounting
Through Hole
Pin Count
2
Package Type
T-3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPW17N
Manufacturer:
HYNIX
Quantity:
3 200
Part Number:
BPW17N
Manufacturer:
OSRAM
Quantity:
46
Part Number:
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Quantity:
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BPW17N
Manufacturer:
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Part Number:
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Manufacturer:
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BPW17N
Vishay Semiconductors
DESCRIPTION
BPW17N is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-3/4 plastic package with lens. It is
sensitive to visible and near infrared radiation. On PCB this
package size enables assembly of arrays with 2.54 mm
pitch.
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
www.vishay.com
370
amb
PRODUCT SUMMARY
COMPONENT
BPW17N
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
= 25 °C, unless otherwise specified
ORDERING CODE
BPW17N
Silicon NPN Phototransistor, RoHS Compliant
For technical questions, contact: detectortechsupport@vishay.com
PACKAGING
Connected with Cu wire, 0.14 mm
I
ca
94 8638-1
Bulk
1.0
(mA)
t
p
TEST CONDITION
/T = 0.5, t
T
amb
t ≤ 3 s
≤ 55 °C
p
≤ 10 ms
MOQ: 5000 pcs, 5000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 12°
• Lead
APPLICATIONS
• Detector in electronic control and drive circuits
RoHS 2002/95/EC and WEEE 2002/96/EC
2
REMARKS
ϕ (deg)
(Pb)-free
± 12
SYMBOL
V
V
R
T
T
I
T
P
CEO
ECO
CM
I
T
amb
thJA
stg
C
sd
V
j
component
- 40 to + 100
- 40 to + 100
VALUE
100
100
100
260
450
32
50
5
PACKAGE FORM
in
Document Number: 81516
450 to 1040
λ
0.1
accordance
Rev. 1.7, 08-Sep-08
T-¾
(nm)
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
V
with

Related parts for BPW17N

BPW17N Summary of contents

Page 1

... BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. PRODUCT SUMMARY ...

Page 2

... 100 Ω mA 100 Ω mA off = 100 Ω mA 100 80 Fig Relative Collector Current vs. Ambient Temperature BPW17N Vishay Semiconductors MIN. TYP. MAX 200 8 0.5 1.0 ± 12 825 450 to 1040 0.3 4.8 5.0 120 2 mW/cm e λ = 950 nm 1.4 1.2 1.0 0.8 ...

Page 3

... BPW17N Vishay Semiconductors λ = 950 nm 0.01 0.001 0.01 0 Irradiance (mW/cm 94 8313 e Fig Collector Light Current vs. Irradiance 10 λ = 950 0.1 0 Collector Emitter Voltage (V) 94 8242 CE Fig Collector Light Current vs. Collector Emitter Voltage MHz 0 Collector Emitter Voltage (V) 94 8240 CE Fig Collector Emitter Capacitance vs. Collector Emitter Voltage www ...

Page 4

... Issue:1; 01.07.96 96 12187 Document Number: 81516 For technical questions, contact: detectortechsupport@vishay.com Rev. 1.7, 08-Sep-08 C Chip position 0.4 BPW17N Vishay Semiconductors ± 0.1 1.8 Area not plane + 0.15 technical drawings according to DIN specifications www.vishay.com 373 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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