RPT-37PB3F Rohm Semiconductor, RPT-37PB3F Datasheet
RPT-37PB3F
Manufacturer Part Number
RPT-37PB3F
Description
Photodetector Transistors PHOTO Visible Ray Cut Colored Pkg
Manufacturer
Rohm Semiconductor
Type
Chipr
Datasheet
1.RPT-37PB3F.pdf
(3 pages)
Specifications of RPT-37PB3F
Maximum Power Dissipation
150 mW
Maximum Dark Current
500 nA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Package / Case
T-1
Voltage - Collector Emitter Breakdown (max)
32V
Current - Collector (ic) (max)
30mA
Current - Dark (id) (max)
500nA
Wavelength
800nm
Viewing Angle
72°
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Phototransistor, top view type
The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect
from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
It is possible to distinguish the polarity by the shape of ramp type.
Applications
Optical control equipment
Receiver for sensors
Features
1) High sensitivity.
2) Almost no effect from stray light.
Absolute maximum ratings (Ta = 25C)
Electrical and optical characteristics (Ta = 25C)
○
c
www.rohm.com
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
RPT-37PB3F
2010 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Symbol
V
θ
I
CE(sat)
CEO
t
λ
Symbol
1 / 2
I
r
C
·t
P
V
V
Topr
Tstg
f
P
CEO
ECO
I
C
C
Min.
2.0
−
−
−
−
−
−25~+85
−30~+85
Typ.
800
±36
10
Limits
−
−
−
150
32
30
5
Max.
0.5
0.4
−
−
−
−
1/2
Dimensions (Units : mm)
Unit
deg
mA
nm
μA
μs
V
Unit
mW
mA
°C
°C
V
V
2− 0.5
4−0.6
V
V
I
V
C
1
CE
CE
CC
=1mA, E=500L
φ3.8±0.3
(2.5)
=5V, E=500L
=10V(Black box)
=5V, I
2
φ3.1±0.2
C
=1mA, R
Conditions
X
X
Notes :
1. Unspecfied tolerance shall be ±0.2.
2. Measurement in the bracket are that of
3. Dimension in parenthesis are show for
−
−
Internal connection diagram
lead pin at base the mold.
reference.
Emitter
L
=100Ω
1
Collector
2
2010.07 - Rev.A
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RPT-37PB3F Summary of contents
Page 1
... Phototransistor, top view type RPT-37PB3F The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode possible to distinguish the polarity by the shape of ramp type. ...
Page 2
... RPT-37PB3F Electrical and optical characteristic curves 1000 100 =10V V CE =20V V CE =30V 0.1 − 100 (°C) AMBIENT TEMPERATURE : Ta Fig.1 Dark current vs. ambient temperature 10 8 E=1000Lux 6 750Lux 4 500Lux 2 250Lux (V) COLLECTOR−EMITTER VOLTAGE : V CE Fig.4 Output characteristics 1000 Ta=25°C = 100 =1kΩ ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...