TEMT1020 Vishay, TEMT1020 Datasheet

Photodetector Transistors NPN Phototransistor

TEMT1020

Manufacturer Part Number
TEMT1020
Description
Photodetector Transistors NPN Phototransistor
Manufacturer
Vishay
Type
IR Chipr
Datasheets

Specifications of TEMT1020

Maximum Power Dissipation
100 mW
Maximum Dark Current
200 nA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
SMD
Transistor Polarity
NPN
Wavelength Typ
880nm
Power Consumption
100mW
Viewing Angle
15°
No. Of Pins
2
Msl
MSL 2 - 1 Year
Light Current
7.0mA
Dark Current
200nA
C-e Breakdown Voltage
70V
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
200nA
Wavelength
950nm
Power - Max
100mW
Mounting Type
Surface Mount
Orientation
Top View
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TEMT1020
Manufacturer:
VISHAY
Quantity:
970
Part Number:
TEMT1020
Quantity:
137
Part Number:
TEMT1020
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
TEMT1020
Quantity:
70 000
Silicon Phototransistor
Description
TEMT1000 series are high speed and high sensitive
silicon NPN epitaxial planar phototransistors in SMD
package with dome lens. Due to integrated Daylight
filter devices are sensitive for IR radiation only.
Features
Absolute Maximum Ratings
T
Document Number 81554
Rev. 1.5, 28-Nov-06
• High photo sensitivity
• Fast response times
• Angle of half sensitivity ϕ = ± 15°
• Daylight filter matched to IR Emitters
• Versatile terminal configurations
• Matched IR Emitter series: TSML1000
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
Emitter collector voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Soldering temperature
Thermal resistance junction/
ambient
amb
(λ = 870 nm to 950 nm)
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
t
T
t ≤ 5 s
p
amb
/T = 0.5, t
≤ 55 °C
Test condition
p
≤ 10 ms
e3
TEMT1000/1020/1030/1040
Applications
• Detector in electronic control and drive circuits
• IR Detector for Daylight application
• Photo interrupters
• Counter
• Encoder
Symbol
V
R
T
T
P
I
T
TEMT1000
ECO
CM
amb
I
T
thJA
stg
C
tot
sd
j
- 40 to + 100
TEMT1030
- 40 to + 85
Vishay Semiconductors
Value
< 260
100
100
100
400
50
5
TEMT1020
TEMT1040
www.vishay.com
K/W
Unit
mW
mA
mA
°C
°C
°C
°C
V
16757
1

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TEMT1020 Summary of contents

Page 1

... IR Detector for Daylight application • Photo interrupters • Counter • Encoder Test condition Symbol V ECO I C ≤ tot stg T amb thJA Vishay Semiconductors TEMT1020 TEMT1030 TEMT1040 16757 Value Unit 100 mA 100 mW 100 ° 100 ° °C < 260 °C 400 K/W www.vishay.com 1 ...

Page 2

... TEMT1000/1020/1030/1040 Vishay Semiconductors Basic Characteristics °C, unless otherwise specified amb Parameter Collector emitter voltage Collector-emitter dark current Collector-emitter capacitance MHz Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation mW/cm e voltage λ = 950 nm, I Turn-on time 100 Ω ...

Page 3

... Collector Current (mA) C Figure 4. Turn On/Turn Off Time vs. Collector Current Document Number 81554 Rev. 1.5, 28-Nov-06 TEMT1000/1020/1030/1040 100 94 8248 Figure 5. Relative Radiant Sensitivity vs. Angular Displacement t off Vishay Semiconductors 0° 10° 20° 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 0.2 0.4 0.6 www.vishay.com 30° ...

Page 4

... TEMT1000/1020/1030/1040 Vishay Semiconductors Package Dimensions in mm TEMT1000 Package Dimensions in mm TEMT1020 16105 www.vishay.com 4 16104 Document Number 81554 Rev. 1.5, 28-Nov-06 ...

Page 5

... Package Dimensions in mm TEMT1030 Package Dimensions in mm TEMT1040 Document Number 81554 Rev. 1.5, 28-Nov-06 TEMT1000/1020/1030/1040 Vishay Semiconductors 16756 16500 www.vishay.com 5 ...

Page 6

... TEMT1000/1020/1030/1040 Vishay Semiconductors Reel Dimensions www.vishay.com 6 18033 Document Number 81554 Rev. 1.5, 28-Nov-06 ...

Page 7

... Taping TEMT1000 Taping TEMT1020 Document Number 81554 Rev. 1.5, 28-Nov-06 TEMT1000/1020/1030/1040 Vishay Semiconductors 18089 18090 www.vishay.com 7 ...

Page 8

... TEMT1000/1020/1030/1040 Vishay Semiconductors Taping TEMT1030 Precautions For Use 1. Over-current-proof Customer must apply resistors for protection, other- wise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5 ° °C, R. 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020 ...

Page 9

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

Page 10

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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